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(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1990 (November)Volume57
Issue<   19   >
PublisherAIP Publishing
Mindat Ref. ID8492060Long-form Identifiermindat:1:5:8492060:1
GUID0
Full Reference(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing
Plain Text(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 57. AIP Publishing

Contains

Simoni, F., Cipparrone, G., Umeton, C. (1990) Mirrorless all‐optical bistability in polymer dispersed liquid crystals. Applied Physics Letters, 57 (19). 1949-1951 doi:10.1063/1.104017
Dutton, T., Dvornikov, A., Van Wonterghem, B., Rentzepis, P. M. (1990) Temperature dependence of optical phase conjugation in semiconductor‐doped glasses. Applied Physics Letters, 57 (19). 1952-1954 doi:10.1063/1.104119
Liu, Xiaoming, Lee, Henry P., Wang, Shyh (1990) Polarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates. Applied Physics Letters, 57 (19). 1955-1957 doi:10.1063/1.104018
Robertson, W. M., Arjavalingam, G., Kopcsay, G. V. (1990) Microwave diffraction and interference in reflection using transient radiation from optoelectronically pulsed antennas. Applied Physics Letters, 57 (19). 1958-1960 doi:10.1063/1.103995
Huang, J. Y., Zhang, J. Y., Shen, Y. R., Chen, C., Wu, B. (1990) High‐power, widely tunable, picosecond coherent source from optical parametric amplification in barium borate. Applied Physics Letters, 57 (19). 1961-1963 doi:10.1063/1.103980
Chen, C. W., Iyer, R., Lee, H. Y., Hafich, M., Robinson, G. Y., Lile, D. L. (1990) Insulated‐gate multiple quantum well optical modulator on InP. Applied Physics Letters, 57 (19). 1964-1966 doi:10.1063/1.103981
Kushibiki, J., Ishikawa, T., Chubachi, N. (1990) Cut‐off characteristics of leaky Sezawa and pseudo‐Sezawa wave modes for thin‐film characterization. Applied Physics Letters, 57 (19). 1967-1969 doi:10.1063/1.103982
Yamaoka, Tomonori, Oyoshi, Keiji, Tagami, Takashi, Arima, Yasunori, Yamashita, Ken, Tanaka, Shuhei (1990) Crystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation. Applied Physics Letters, 57 (19). 1970-1972 doi:10.1063/1.103983
Wu, M. F., Vantomme, A., Langouche, G., Maex, K., Vanderstraeten, H., Bruynseraede, Y. (1990) Antiparallel crystal orientation in CoSi2epitaxial bilayers formed by ion implantation. Applied Physics Letters, 57 (19). 1973-1975 doi:10.1063/1.104148
Davis, J. W., Haasz, A. A. (1990) Chemically enhanced self‐sputtering of carbon. Applied Physics Letters, 57 (19). 1976-1977 doi:10.1063/1.103984
Xie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985
Krost, A., Richter, W., Zahn, D. R. T., Hingerl, K., Sitter, H. (1990) Chemical reaction at the ZnSe/GaAs interface detected by Raman spectroscopy. Applied Physics Letters, 57 (19). 1981-1982 doi:10.1063/1.104149
Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi, Motohisa, Junich, Sakaki, Hiroyuki (1990) High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection. Applied Physics Letters, 57 (19). 1983-1985 doi:10.1063/1.103986
Lambkin, J. D., Dunstan, D. J., Homewood, K. P., Howard, L. K., Emeny, M. T. (1990) Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells. Applied Physics Letters, 57 (19). 1986-1988 doi:10.1063/1.103987
Stjerna, B., Granqvist, C. G. (1990) Optical properties of SnOxthin films: Theory and experiment. Applied Physics Letters, 57 (19). 1989-1991 doi:10.1063/1.104150
Stanley, C. R., Holland, M. C., Kean, A. H. (1990) Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2. Applied Physics Letters, 57 (19). 1992-1994 doi:10.1063/1.103988
Crowder, M. S., Tober, E. D., Kanicki, J. (1990) Photobleaching of light‐induced paramagnetic defects in amorphous silicon nitride films. Applied Physics Letters, 57 (19). 1995-1997 doi:10.1063/1.104151
Schneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
Youn, H. J., Darling, R. B., Kuhn, K. J. (1990) Effect of AlGaAs window and buffer layers on the response characteristics of GaAs photoconductive detectors. Applied Physics Letters, 57 (19). 2001-2003 doi:10.1063/1.103990
Schwartz, P. V., Sturm, J. C. (1990) Microsecond carrier lifetimes in strained silicon‐germanium alloys grown by rapid thermal chemical vapor deposition. Applied Physics Letters, 57 (19). 2004-2006 doi:10.1063/1.103991
Madhukar, A., Rajkumar, K. C., Chen, Li, Guha, S., Kaviani, K., Kapre, R. (1990) Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters, 57 (19). 2007-2009 doi:10.1063/1.103992
Yew, Tri‐Rung, Reif, Rafael (1990) Insitudoping in silicon selective epitaxial growth at 800 °C by ultralow‐pressure chemical vapor deposition. Applied Physics Letters, 57 (19). 2010-2012 doi:10.1063/1.103993
Peng, Xuezhou, Horowitz, Gilles, Fichou, Denis, Garnier, Francis (1990) All‐organic thin‐film transistors made of alpha‐sexithienyl semiconducting and various polymeric insulating layers. Applied Physics Letters, 57 (19). 2013-2015 doi:10.1063/1.103994
Chew, N. G., Goodyear, S. W., Edwards, J. A., Satchell, J. S., Blenkinsop, S. E., Humphreys, R. G. (1990) Effect of small changes in composition on the electrical and structural properties of YBa2Cu3O7thin films. Applied Physics Letters, 57 (19). 2016-2018 doi:10.1063/1.104152
Lee, A. E., Platt, C. E., Burch, J. F., Simon, R. W., Goral, J. P., Al‐Jassim, M. M. (1990) Epitaxially grown sputtered LaAlO3 films. Applied Physics Letters, 57 (19). 2019-2021 doi:10.1063/1.104153
Singh, Rajiv K., Bhattacharya, D., Narayan, J. (1990) Subsurface heating effects during pulsed laser evaporation of materials. Applied Physics Letters, 57 (19). 2022-2024 doi:10.1063/1.104118
Hurng, W.‐M., Wu, S. F., Shei, C. Y., Huang, Y. T., Lee, W. H. (1990) Formation mechanism study of REBa2Cu4O8+δ(RE=Y and Dy) accelerated by nitric acid. Applied Physics Letters, 57 (19). 2025-2027 doi:10.1063/1.104154
Matsuyama, H., Koike, K., Kobayashi, T., Nakatani, R., Yamamoto, K. (1990) Side plane domain observation of Fe‐C/Ni‐Fe/BN multilayers with a spin‐polarized scanning electron microscope. Applied Physics Letters, 57 (19). 2028-2030 doi:10.1063/1.103996
Hamers, R. J., Cahill, David G. (1990) Ultrafast time resolution in scanned probe microscopies. Applied Physics Letters, 57 (19). 2031-2033 doi:10.1063/1.103997
Grundmann, M., Lienert, U., Bimberg, D., Fischer‐Colbrie, A., Miller, J. N. (1990) Erratum: Anisotropic and inhomogeneous strain relaxation in pseudomorphic In0.23Ga0.77As/GaAs quantum wells [Appl. Phys. Lett. 55, 1765 (1989)]. Applied Physics Letters, 57 (19). 2034 doi:10.1063/1.104290
Harata, Akira, Nishimura, Hiroyuki, Sawada, Tsuguo (1990) Erratum: Laser‐induced surface acoustic waves and photothermal surface gratings generated by crossing two pulsed laser beams [Appl. Phys. Lett. 57, 132 (1990)]. Applied Physics Letters, 57 (19). 2034 doi:10.1063/1.104291

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