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Stanley, C. R., Holland, M. C., Kean, A. H. (1990) Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2. Applied Physics Letters, 57 (19). 1992-1994 doi:10.1063/1.103988

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Reference TypeJournal (article/letter/editorial)
TitlePeak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2
JournalApplied Physics Letters
AuthorsStanley, C. R.Author
Holland, M. C.Author
Kean, A. H.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103988Search in ResearchGate
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Mindat Ref. ID8492076Long-form Identifiermindat:1:5:8492076:2
GUID0
Full ReferenceStanley, C. R., Holland, M. C., Kean, A. H. (1990) Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2. Applied Physics Letters, 57 (19). 1992-1994 doi:10.1063/1.103988
Plain TextStanley, C. R., Holland, M. C., Kean, A. H. (1990) Peak electron mobilities between 2.75 and 3.32×105cm2 V−1 s−1in GaAs grown by molecular beam epitaxy with As2. Applied Physics Letters, 57 (19). 1992-1994 doi:10.1063/1.103988
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Stanley, C. R., Holland, M. C., Kean, A. H., Stanaway, M. B., Grimes, R. T., Chamberlain, J. M. (1991) Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105cm2 V−1 s−1. Applied Physics Letters, 58 (5). 478-480 doi:10.1063/1.104613
Stanley, C.R., Holland, M.C., Kean, A.H., Chamberlain, J.M., Grimes, R.T., Stanaway, M.B. (1991) 4 × 105 cm2 V−1 s−1 peak electron mobilities in GaAs grown by solid source MBE with As2. Journal of Crystal Growth, 111 (1). 14-19 doi:10.1016/0022-0248(91)90939-3
Ribas, P., Krishnamoorthy, V., Park, R. M. (1990) Device quality In0.4Ga0.6As grown on GaAs by molecular beam epitaxy. Applied Physics Letters, 57 (10). 1040-1042 doi:10.1063/1.103559
Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817
Cho, N.‐H., Krishnan, Kannan M., Lee, C. H., Farrow, R. F. C. (1992) Twin formation in Ag seeded Co/Pt multilayers grown on GaAs by molecular beam epitaxy. Applied Physics Letters, 60 (19). 2371-2373 doi:10.1063/1.107029
Cheng, T. M., Chang, C. Y., Huang, J. H. (1995) Substrate orientation dependence of low‐temperature GaAs grown by molecular beam epitaxy. Applied Physics Letters, 66 (1). 55-57 doi:10.1063/1.114181
Schubert, E. F., Luftman, H. S., Kopf, R. F., Headrick, R. L., Kuo, J. M. (1990) Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (17). 1799-1801 doi:10.1063/1.104026
Levine, B. F., Bethea, C. G., Shen, V. O., Malik, R. J. (1990) Tunable long‐wavelength detectors using graded barrier quantum wells grown by electron beam source molecular beam epitaxy. Applied Physics Letters, 57 (4). 383-385 doi:10.1063/1.103699
Kim, Y. S., Lee, S. S., Ramaswamy, R. V., Sakai, S., Kao, Y. C., Shichijo, H. (1990) Low‐loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy. Applied Physics Letters, 56 (9). 802-804 doi:10.1063/1.102668
Holmes, D. M., Belk, J. G., Sudijono, J. L., Neave, J. H., Jones, T. S., Joyce, B. A. (1995) Differences between As2 and As4 in the homoepitaxial growth of GaAs(110) by molecular beam epitaxy. Applied Physics Letters, 67 (19). 2848-2850 doi:10.1063/1.114805
Colocci, M., Gurioli, M., Vinattieri, A., Deparis, C., Massies, J., Neu, G. (1990) Time‐resolved luminescence of GaAs/AlGaAs heterostructures grown by molecular beam epitaxy on misoriented substrates. Applied Physics Letters, 57 (8). 783-785 doi:10.1063/1.103419
 
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