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Madhukar, A., Rajkumar, K. C., Chen, Li, Guha, S., Kaviani, K., Kapre, R. (1990) Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters, 57 (19). 2007-2009 doi:10.1063/1.103992

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Reference TypeJournal (article/letter/editorial)
TitleRealization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates
JournalApplied Physics Letters
AuthorsMadhukar, A.Author
Rajkumar, K. C.Author
Chen, LiAuthor
Guha, S.Author
Kaviani, K.Author
Kapre, R.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103992Search in ResearchGate
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Mindat Ref. ID8492084Long-form Identifiermindat:1:5:8492084:1
GUID0
Full ReferenceMadhukar, A., Rajkumar, K. C., Chen, Li, Guha, S., Kaviani, K., Kapre, R. (1990) Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters, 57 (19). 2007-2009 doi:10.1063/1.103992
Plain TextMadhukar, A., Rajkumar, K. C., Chen, Li, Guha, S., Kaviani, K., Kapre, R. (1990) Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters, 57 (19). 2007-2009 doi:10.1063/1.103992
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Guha, S., Madhukar, A., Chen, Li (1990) Defect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions. Applied Physics Letters, 56 (23). 2304-2306 doi:10.1063/1.102948
Chen, Li, Rajkumar, K.C., Madhukar, A., Chen, Wei, Guha, S., Kaviani, K. (1991) Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates. Journal of Crystal Growth, 111 (1). 424-428 doi:10.1016/0022-0248(91)91013-z
Chen, Li, Rajkumar, K. C., Madhukar, A. (1990) Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy. Applied Physics Letters, 57 (23). 2478-2480 doi:10.1063/1.103835
Kapre, R., Madhukar, A., Kaviani, K., Guha, S., Rajkumar, K. C. (1990) Realization and analysis of GaAs/AlAs/In0.1Ga0.9As based resonant tunneling diodes with high peak‐to‐valley ratios at room temperature. Applied Physics Letters, 56 (10). 922-924 doi:10.1063/1.102626
Guha, S., Madhukar, A., Rajkumar, K. C. (1990) Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100). Applied Physics Letters, 57 (20). 2110-2112 doi:10.1063/1.103914
Rajkumar, K. C., Kaviani, K., Chen, J., Chen, P., Madhukar, A. (1992) Nanofeatures on GaAs (111)B via photolithography. Applied Physics Letters, 60 (7). 850-852 doi:10.1063/1.106534
Hu, Kezhong, Chen, Li, Madhukar, Anupam, Chen, Ping, Rajkumar, K. C., Kaviani, Kian, Karim, Zaheed, Kyriakakis, Chris, Tanguay, Armand R. (1991) High contrast ratio asymmetric Fabry–Perot reflection light modulator based on GaAs/InGaAs multiple quantum wells. Applied Physics Letters, 59 (9). 1108-1110 doi:10.1063/1.106359
Kapre, R.M., Madhukar, A., Guha, S. (1991) Highly strained pseudomorphic InxGa1−xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates. Journal of Crystal Growth, 111 (1). 1110-1115 doi:10.1016/0022-0248(91)91143-x
Rich, D. H., Rajkumar, K. C., Chen, Li, Madhukar, A., Grunthaner, F. J. (1992) Near‐infrared cathodoluminescence imaging of defect distributions in In0.2Ga0.8As/GaAs multiple quantum wells grown on prepatterned GaAs. Applied Physics Letters, 61 (2). 222-224 doi:10.1063/1.108225
Madhukar, A., Rajkumar, K. C., Chen, P. (1993) Insituapproach to realization of three‐dimensionally confined structures via substrate encoded size reducing epitaxy on nonplanar patterned substrates. Applied Physics Letters, 62 (13). 1547-1549 doi:10.1063/1.108636
Kapre, R. M., Madhukar, A., Guha, S. (1991) Highly strained GaAs/InGaAs/AlAs resonant tunneling diodes with simultaneously high peak current densities and peak‐to‐valley ratios at room temperature. Applied Physics Letters, 58 (20). 2255-2257 doi:10.1063/1.104943
 
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