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Guha, S., Madhukar, A., Chen, Li (1990) Defect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions. Applied Physics Letters, 56 (23). 2304-2306 doi:10.1063/1.102948

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Reference TypeJournal (article/letter/editorial)
TitleDefect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions
JournalApplied Physics Letters
AuthorsGuha, S.Author
Madhukar, A.Author
Chen, LiAuthor
Year1990 (June 4)Volume56
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.102948Search in ResearchGate
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Mindat Ref. ID8490624Long-form Identifiermindat:1:5:8490624:9
GUID0
Full ReferenceGuha, S., Madhukar, A., Chen, Li (1990) Defect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions. Applied Physics Letters, 56 (23). 2304-2306 doi:10.1063/1.102948
Plain TextGuha, S., Madhukar, A., Chen, Li (1990) Defect reduction in strained InxGa1−xAs via growth on GaAs (100) substrates patterned to submicron dimensions. Applied Physics Letters, 56 (23). 2304-2306 doi:10.1063/1.102948
In(1990, June) Applied Physics Letters Vol. 56 (23) AIP Publishing

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Madhukar, A., Rajkumar, K. C., Chen, Li, Guha, S., Kaviani, K., Kapre, R. (1990) Realization of low defect density, ultrathick, strained InGaAs/GaAs multiple quantum well structures via growth on patterned GaAs (100) substrates. Applied Physics Letters, 57 (19). 2007-2009 doi:10.1063/1.103992
Guha, S., Madhukar, A., Rajkumar, K. C. (1990) Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100). Applied Physics Letters, 57 (20). 2110-2112 doi:10.1063/1.103914
Tang, W. C., Rosen, H. J., Guha, S., Madhukar, A. (1991) Raman microprobe study of narrow InxGa1−xAs stripes on patterned GaAs(100) substrates. Applied Physics Letters, 58 (15). 1644-1646 doi:10.1063/1.105151
Kapre, R.M., Madhukar, A., Guha, S. (1991) Highly strained pseudomorphic InxGa1−xAs/AlAs based resonant tunneling diodes grown on patterned and non-patterned GaAs(100) substrates. Journal of Crystal Growth, 111 (1). 1110-1115 doi:10.1016/0022-0248(91)91143-x
Chen, Li, Rajkumar, K. C., Madhukar, A. (1990) Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy. Applied Physics Letters, 57 (23). 2478-2480 doi:10.1063/1.103835
Chen, Li, Rajkumar, K.C., Madhukar, A., Chen, Wei, Guha, S., Kaviani, K. (1991) Realization of sharp excitonic features in highly strained GaAs/InxGa1−xAs multiple quantum wells grown on GaAs(100) substrates. Journal of Crystal Growth, 111 (1). 424-428 doi:10.1016/0022-0248(91)91013-z
Konkar, A., Madhukar, A., Chen, P. (1998) Stress-engineered spatially selective self-assembly of strained InAs quantum dots on nonplanar patterned GaAs(001) substrates. Applied Physics Letters, 72 (2). 220-222 doi:10.1063/1.120691
Niki, S., Kellner, A. L., Lin, S. C., Cheng, A., Williams, A. R., Chang, W. S. C., Wieder, H. H. (1990) Electroabsorption effects in InxGa1−xAs/GaAs strained‐layer superlattices. Applied Physics Letters, 56 (5). 475-477 doi:10.1063/1.102770
Wang, H., Hopgood, A. A., Ng, G. I. (1997) Analysis of dark-line defect growth suppression in InxGa1−xAs/GaAs strained heterostructures. Journal of Applied Physics, 81 (7). 3117-3123 doi:10.1063/1.364353
Chen, Y. C., Bhattacharya, P. K., Singh, J. (1990) Reflection high‐energy electron diffraction studies of the growth of strained InxGa1−xAs on GaAs substrate by migration‐enhanced epitaxy. Applied Physics Letters, 57 (7). 692-694 doi:10.1063/1.103594
Guha, S., Madhukar, A. (1993) An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates. Journal of Applied Physics, 73 (12). 8662-8664 doi:10.1063/1.353353
 
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