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Chen, C. W., Iyer, R., Lee, H. Y., Hafich, M., Robinson, G. Y., Lile, D. L. (1990) Insulated‐gate multiple quantum well optical modulator on InP. Applied Physics Letters, 57 (19). 1964-1966 doi:10.1063/1.103981

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Reference TypeJournal (article/letter/editorial)
TitleInsulated‐gate multiple quantum well optical modulator on InP
JournalApplied Physics Letters
AuthorsChen, C. W.Author
Iyer, R.Author
Lee, H. Y.Author
Hafich, M.Author
Robinson, G. Y.Author
Lile, D. L.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103981Search in ResearchGate
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Mindat Ref. ID8492062Long-form Identifiermindat:1:5:8492062:9
GUID0
Full ReferenceChen, C. W., Iyer, R., Lee, H. Y., Hafich, M., Robinson, G. Y., Lile, D. L. (1990) Insulated‐gate multiple quantum well optical modulator on InP. Applied Physics Letters, 57 (19). 1964-1966 doi:10.1063/1.103981
Plain TextChen, C. W., Iyer, R., Lee, H. Y., Hafich, M., Robinson, G. Y., Lile, D. L. (1990) Insulated‐gate multiple quantum well optical modulator on InP. Applied Physics Letters, 57 (19). 1964-1966 doi:10.1063/1.103981
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Chen, C. W., Kim, J. W., Silvestre, P., Hafich, M. J., Woods, L. M., Robinson, G. Y., Lile, D. L. (1993) A low drive voltage electroabsorption modulator using an InGaAs/InP superlattice. Journal of Applied Physics, 74 (9). 5895-5897 doi:10.1063/1.355305
Tsang, H. K., Soole, J. B. D., LeBlanc, H. P., Bhat, R., Koza, M. A., White, I. H. (1990) Efficient InGaAsP/InP multiple quantum well waveguide optical phase modulator. Applied Physics Letters, 57 (22). 2285-2287 doi:10.1063/1.103910
Crumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209
Lile, D. L., Collins, D. A. (1980) An insulated‐gate charge transfer device on InP. Applied Physics Letters, 37 (6). 552-553 doi:10.1063/1.91983
Wey, Y. G., Crawford, D. L., Giboney, K., Bowers, J. E., Rodwell, M. J., Silvestre, P., Hafich, M. J., Robinson, G. Y. (1991) Ultrafast graded double‐heterostructure GaInAs/InP photodiode. Applied Physics Letters, 58 (19). 2156-2158 doi:10.1063/1.104991
Hafich, M. J., Lee, H. Y., Robinson, G. Y., Li, D., Otsuka, N. (1991) Quantum‐well structures of InAlP/InGaP grown by gas‐source molecular‐beam epitaxy. Journal of Applied Physics, 69 (2). 752-756 doi:10.1063/1.348921
Lee, Y. H., Jewell, J. L., Walker, S. J., Tu, C. W., Harbison, J. P., Florez, L. T. (1988) Electrodispersive multiple quantum well modulator. Applied Physics Letters, 53 (18). 1684-1686 doi:10.1063/1.99797
Huang, T. C., Chung, Y., Dagli, N., Coldren, L. A. (1990) GaAs/AlGaAs multiple quantum well field‐induced optical waveguide. Applied Physics Letters, 57 (2). 114-116 doi:10.1063/1.103959
Lile, D. L., Taylor, M. J. (1983) The effect of interfacial traps on the stability of insulated gate devices on InP. Journal of Applied Physics, 54 (1). 260-267 doi:10.1063/1.331695
Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkoç, H., Hafich, M., Wang, P. D., Robinson, G. Y. (1984) Optical properties of GaAs on (100) Si using molecular beam epitaxy. Applied Physics Letters, 45 (12). 1309-1311 doi:10.1063/1.95130
Lee, H. Y., Crook, M. D., Hafich, M. J., Quigley, J. H., Robinson, G. Y., Li, D., Otsuka, N. (1989) InGaP/GaAs superlattices grown by gas‐source molecular beam epitaxy. Applied Physics Letters, 55 (22). 2322-2324 doi:10.1063/1.102050
 
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