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Crumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of InP on Si substrates by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsCrumbaker, T. E.Author
Lee, H. Y.Author
Hafich, M. J.Author
Robinson, G. Y.Author
Year1989 (January 9)Volume54
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.101209Search in ResearchGate
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Mindat Ref. ID8486597Long-form Identifiermindat:1:5:8486597:9
GUID0
Full ReferenceCrumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209
Plain TextCrumbaker, T. E., Lee, H. Y., Hafich, M. J., Robinson, G. Y. (1989) Growth of InP on Si substrates by molecular beam epitaxy. Applied Physics Letters, 54 (2). 140-142 doi:10.1063/1.101209
In(1989, January) Applied Physics Letters Vol. 54 (2) AIP Publishing

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Lee, H. Y., Crook, M. D., Hafich, M. J., Quigley, J. H., Robinson, G. Y., Li, D., Otsuka, N. (1989) InGaP/GaAs superlattices grown by gasā€source molecular beam epitaxy. Applied Physics Letters, 55 (22). 2322-2324 doi:10.1063/1.102050
Hafich, M. J., Quigley, J. H., Owens, R. E., Robinson, G. Y., Li, Du, Otsuka, N. (1989) High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy. Applied Physics Letters, 54 (26). 2686-2688 doi:10.1063/1.101035
Crumbaker, T. E., Hafich, M. J., Robinson, G. Y., Jones, K. M., Alā€Jassim, M. M., Davis, A., Lorenzo, J. P. (1991) The influence of dislocation density on electron mobility in InP films on Si. Applied Physics Letters, 59 (9). 1090-1092 doi:10.1063/1.106353
Hafich, M. J., Lee, H. Y., Robinson, G. Y., Li, D., Otsuka, N. (1991) Quantumā€well structures of InAlP/InGaP grown by gasā€source molecularā€beam epitaxy. Journal of Applied Physics, 69 (2). 752-756 doi:10.1063/1.348921
Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Pearah, P., MorkoƧ, H., Hafich, M., Wang, P. D., Robinson, G. Y. (1984) Optical properties of GaAs on (100)ā€‰Si using molecular beam epitaxy. Applied Physics Letters, 45 (12). 1309-1311 doi:10.1063/1.95130
Kim, H. S., Hafich, M. J., Patrizi, G. A., Nanda, A., Vogt, T. J., Woods, L. M., Robinson, G. Y. (1993) Electron traps in InGaP grown by gas source molecular beam epitaxy. Journal of Applied Physics, 74 (2). 1431-1433 doi:10.1063/1.355330
Huang, D., Agarwala, S., MorkoƧ, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
Lee, M. K., Wuu, D. S., Tung, H. H., Chang, J. H., Lin, Y. F. (1988) Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by lowā€pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (2). 107-109 doi:10.1063/1.100383
Chen, C. W., Iyer, R., Lee, H. Y., Hafich, M., Robinson, G. Y., Lile, D. L. (1990) Insulatedā€gate multiple quantum well optical modulator on InP. Applied Physics Letters, 57 (19). 1964-1966 doi:10.1063/1.103981
Yodo, T., Tamura, M., LĆ³pez, M., Kajikawa, Y. (1994) GaAs heteroepitaxial growth on vicinal Si(110) substrates by molecular beam epitaxy. Journal of Applied Physics, 76 (11). 7630-7632 doi:10.1063/1.357932
Varrio, J., Asonen, H., Lammasniemi, J., Rakennus, K., Pessa, M. (1989) Model of growth of singleā€domain GaAs layers on doubleā€domain Si substrates by molecular beam epitaxy. Applied Physics Letters, 55 (19). 1987-1989 doi:10.1063/1.102141
 
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