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Lee, M. K., Wuu, D. S., Tung, H. H., Chang, J. H., Lin, Y. F. (1988) Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (2). 107-109 doi:10.1063/1.100383

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsLee, M. K.Author
Wuu, D. S.Author
Tung, H. H.Author
Chang, J. H.Author
Lin, Y. F.Author
Year1988 (July 11)Volume53
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.100383Search in ResearchGate
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Mindat Ref. ID8484752Long-form Identifiermindat:1:5:8484752:0
GUID0
Full ReferenceLee, M. K., Wuu, D. S., Tung, H. H., Chang, J. H., Lin, Y. F. (1988) Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (2). 107-109 doi:10.1063/1.100383
Plain TextLee, M. K., Wuu, D. S., Tung, H. H., Chang, J. H., Lin, Y. F. (1988) Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (2). 107-109 doi:10.1063/1.100383
In(1988, July) Applied Physics Letters Vol. 53 (2) AIP Publishing

See Also

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Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., Huang, K. C. (1988) Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 52 (11). 880-882 doi:10.1063/1.99260
Lee, M. K., Wuu, D. S., Tung, H. H. (1987) Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition. Applied Physics Letters, 50 (24). 1725-1726 doi:10.1063/1.97728
Lee, M. K., Wuu, D. S., Tung, H. H. (1987) Low pressure metalorganic vapor phase epitaxy of InP using a trimethylindium‐trimethylphosphine adduct source. Applied Physics Letters, 50 (25). 1805-1807 doi:10.1063/1.97703
Lee, M.K., Huang, K.C., Wuu, D.S., Tung, H.H., Yu, K.Y. (1988) Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 539-542 doi:10.1016/0022-0248(88)90580-5
Wuu, D. S., Tung, H. H., Horng, R. H., Lee, M. K. (1989) Material properties of InP‐on‐Si grown by low‐pressure organometallic vapor‐phase epitaxy. Journal of Applied Physics, 65 (3). 1213-1216 doi:10.1063/1.343011
Lee, M. K., Wuu, D. S., Tung, H. H. (1987) Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor deposition. Journal of Applied Physics, 62 (8). 3209-3211 doi:10.1063/1.339321
Horikawa, H., Ogawa, Y., Kawai, Y., Sakuta, M. (1988) Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (5). 397-399 doi:10.1063/1.99890
Lee, M. K., Chang, J. H., Yeh, M. Y., Lin, Y. F. (1988) Heteroepitaxial growth of ZnSe on (111) Si by low‐pressure metalorganic chemical vapor deposition. Journal of Applied Physics, 64 (8). 4241-4243 doi:10.1063/1.341292
Wuu, D. S., Horng, R. H., Lee, M. K. (1989) Strain variations in heteroepitaxial InP‐on‐Si grown by low‐pressure metalorganic chemical vapor deposition. Applied Physics Letters, 54 (22). 2244-2246 doi:10.1063/1.101137
Horng, R. H., Wuu, D. S., Lee, M. K. (1988) Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low‐pressure organometallic chemical vapor deposition. Applied Physics Letters, 53 (26). 2614-2616 doi:10.1063/1.100175
Galeuchet, Yvan D., Roentgen, Peter, Graf, Volker (1988) Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (26). 2638-2640 doi:10.1063/1.100180
 
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