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Horikawa, H., Ogawa, Y., Kawai, Y., Sakuta, M. (1988) Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (5). 397-399 doi:10.1063/1.99890

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsHorikawa, H.Author
Ogawa, Y.Author
Kawai, Y.Author
Sakuta, M.Author
Year1988 (August)Volume53
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.99890Search in ResearchGate
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Mindat Ref. ID8485504Long-form Identifiermindat:1:5:8485504:2
GUID0
Full ReferenceHorikawa, H., Ogawa, Y., Kawai, Y., Sakuta, M. (1988) Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (5). 397-399 doi:10.1063/1.99890
Plain TextHorikawa, H., Ogawa, Y., Kawai, Y., Sakuta, M. (1988) Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (5). 397-399 doi:10.1063/1.99890
In(1988, August) Applied Physics Letters Vol. 53 (5) AIP Publishing

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Horikawa, H., Imanaka, K., Matoba, A., Kawai, Y., Sakuta, M. (1984) High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy. Applied Physics Letters, 45 (4). 328-330 doi:10.1063/1.95257
Lee, M. K., Wuu, D. S., Tung, H. H., Chang, J. H., Lin, Y. F. (1988) Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (2). 107-109 doi:10.1063/1.100383
Imanaka, K., Horikawa, H., Matoba, A., Kawai, Y., Sakuta, M. (1984) High power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate. Applied Physics Letters, 45 (3). 282-283 doi:10.1063/1.95173
Lee, M. K., Wuu, D. S., Tung, H. H. (1987) Heteroepitaxial growth of InP on GaAs by low‐pressure metalorganic chemical vapor deposition. Journal of Applied Physics, 62 (8). 3209-3211 doi:10.1063/1.339321
Ogawa, Hiroshi, Nishio, Mitsuhiro (1988) Homoepitaxial growth of ZnTe by low‐pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 64 (12). 6750-6753 doi:10.1063/1.342007
Lee, M. K., Chang, J. H., Yeh, M. Y., Lin, Y. F. (1988) Heteroepitaxial growth of ZnSe on (111) Si by low‐pressure metalorganic chemical vapor deposition. Journal of Applied Physics, 64 (8). 4241-4243 doi:10.1063/1.341292
Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., Huang, K. C. (1988) Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 52 (11). 880-882 doi:10.1063/1.99260
Lee, M. K., Wuu, D. S., Tung, H. H. (1987) Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition. Applied Physics Letters, 50 (24). 1725-1726 doi:10.1063/1.97728
Galeuchet, Yvan D., Roentgen, Peter, Graf, Volker (1988) Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (26). 2638-2640 doi:10.1063/1.100180
Horikawa, H., Kawai, Y., Akiyama, M., Sakuta, M. (1988) Hetero-epitaxial growth of InP on Si substrates by LP-MOVPE. Journal of Crystal Growth, 93 (1). 523-526 doi:10.1016/0022-0248(88)90577-5
Suemune, I., Kunitsugu, Y., Tanaka, Y., Kan, Y., Yamanishi, M. (1988) New low‐temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasma. Applied Physics Letters, 53 (22). 2173-2175 doi:10.1063/1.100273
 
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