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Imanaka, K., Horikawa, H., Matoba, A., Kawai, Y., Sakuta, M. (1984) High power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate. Applied Physics Letters, 45 (3). 282-283 doi:10.1063/1.95173

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Reference TypeJournal (article/letter/editorial)
TitleHigh power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate
JournalApplied Physics Letters
AuthorsImanaka, K.Author
Horikawa, H.Author
Matoba, A.Author
Kawai, Y.Author
Sakuta, M.Author
Year1984 (August)Volume45
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.95173Search in ResearchGate
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Mindat Ref. ID8474328Long-form Identifiermindat:1:5:8474328:8
GUID0
Full ReferenceImanaka, K., Horikawa, H., Matoba, A., Kawai, Y., Sakuta, M. (1984) High power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate. Applied Physics Letters, 45 (3). 282-283 doi:10.1063/1.95173
Plain TextImanaka, K., Horikawa, H., Matoba, A., Kawai, Y., Sakuta, M. (1984) High power output, low threshold, inner stripe GaInAsP laser diode on ap‐type InP substrate. Applied Physics Letters, 45 (3). 282-283 doi:10.1063/1.95173
In(1984, August) Applied Physics Letters Vol. 45 (3) AIP Publishing

See Also

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Horikawa, H., Imanaka, K., Matoba, A., Kawai, Y., Sakuta, M. (1984) High‐power, low‐threshold, single‐mode GaInAsP/InP laser by low‐temperature, single‐step liquid phase epitaxy. Applied Physics Letters, 45 (4). 328-330 doi:10.1063/1.95257
Imanaka, K., Horikawa, H., Kawai, Y., Sakuta, M. (1984) A novel technique to fabricate GaInAsP/InP buried heterostructure laser diodes. Applied Physics Letters, 44 (10). 975-977 doi:10.1063/1.94617
Watanabe, A., Yamada, T., Imanaka, K., Horikawa, H., Kawai, Y., Sakuta, M. (1985) AlGaAs/GaAs melt‐etched inner stripe laser diode with self‐aligned structure. Applied Physics Letters, 46 (11). 1023-1025 doi:10.1063/1.95798
Horikawa, H., Oshiba, S., Matoba, A., Kawai, Y. (1987) V‐grooved inner‐stripe laser diodes on ap‐type substrate operating over 100 mW at 1.5 μm wavelength. Applied Physics Letters, 50 (7). 374-376 doi:10.1063/1.98203
Horikawa, H., Ogawa, Y., Kawai, Y., Sakuta, M. (1988) Heteroepitaxial growth of InP on a GaAs substrate by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (5). 397-399 doi:10.1063/1.99890
Wada, H., Horikawa, H., Matsui, Y., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed 1.3 μm V‐grooved inner‐stripe lasers with new semi‐insulating current confinement structures onp‐InP substrates. Applied Physics Letters, 55 (8). 723-725 doi:10.1063/1.101786
Horikawa, H., Wada, H., Matsui, Y., Yamada, T., Ogawa, Y., Kawai, Y. (1989) High‐power and high‐speed semi‐insulating blocked V‐grooved inner‐stripe lasers at 1.3 μm wavelength fabricated onp‐InP substrates. Applied Physics Letters, 54 (12). 1077-1079 doi:10.1063/1.100762
Horikawa, H., Akiyama, M., Kawai, Y., Sakuta, M. (1990) GaInAsP grown on Si by MOVPE using GaAs/InP double buffer layers. Journal of Crystal Growth, 99 (1). 361-364 doi:10.1016/0022-0248(90)90544-u
Burkhard, H., Kuphal, E. (1983) InGaAsP/InP Mushroom Stripe Lasers with Low CW Threshold and High Output Power. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l721
Chen, T. R., Zhuang, Y. H., Xu, Y. J., Yariv, A., Kwong, N. S. (1990) 1.5 μm InGaAsP/InP buried crescent superluminescent diode on ap‐InP substrate. Applied Physics Letters, 56 (25). 2502-2503 doi:10.1063/1.102871
Horikawa, H., Akiyama, M., Onozawa, S., Kawai, Y., Sakuta, M. (1990) Interfacial layers of InP/Si heteroepitaxy. Applied Surface Science, 41. 598-603 doi:10.1016/0169-4332(89)90129-3
 
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