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Lee, M.K., Huang, K.C., Wuu, D.S., Tung, H.H., Yu, K.Y. (1988) Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 539-542 doi:10.1016/0022-0248(88)90580-5

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy
JournalJournal of Crystal Growth
AuthorsLee, M.K.Author
Huang, K.C.Author
Wuu, D.S.Author
Tung, H.H.Author
Yu, K.Y.Author
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90580-5Search in ResearchGate
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Mindat Ref. ID2783991Long-form Identifiermindat:1:5:2783991:7
GUID0
Full ReferenceLee, M.K., Huang, K.C., Wuu, D.S., Tung, H.H., Yu, K.Y. (1988) Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 539-542 doi:10.1016/0022-0248(88)90580-5
Plain TextLee, M.K., Huang, K.C., Wuu, D.S., Tung, H.H., Yu, K.Y. (1988) Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 539-542 doi:10.1016/0022-0248(88)90580-5
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

See Also

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Lee, M. K., Wuu, D. S., Tung, H. H., Chang, J. H., Lin, Y. F. (1988) Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 53 (2). 107-109 doi:10.1063/1.100383
Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., Huang, K. C. (1988) Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 52 (11). 880-882 doi:10.1063/1.99260
D. Dupuis, Russell, Pinzone, C.J. (1988) The growth of AlGaAs-GaAs lasers on Si substrates by metalorganic chemical vapor deposition. Journal of Crystal Growth, 93 (1). 434-442 doi:10.1016/0022-0248(88)90564-7
(1988) Fourth international conference on metalorganic vapor phase epitaxy ICMOVPE-IV. Journal of Crystal Growth, 93 (1). doi:10.1016/0022-0248(88)90495-2
Matsumoto, Koh, Hikada, Junnichi, Tsunoda, Ryuji (1988) Study of nucleation and growth of clusters on nominal and vicinal (100)GaAs by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 170-176 doi:10.1016/0022-0248(88)90523-4
Lee, B.-T., Logan, R.A. (1994) Growth of InP on etched grooves using atmospheric pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 140 (1). 1-8 doi:10.1016/0022-0248(94)90488-x
Kondo, M., Yamazaki, S., Sugawara, M., Okuda, H., Kato, K., Nakajima, K. (1988) High-quality InGaAsP/InP single-quantum wells and superlattice structures grown by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 376-381 doi:10.1016/0022-0248(88)90556-8
Demeester, P., Ackaert, A., Moerman, I., Baets, R., Lagasse, P. (1988) Metalorganic vapor phase heteroepitaxial growth of (Al)GaAs on InP for device applications. Journal of Crystal Growth, 93 (1). 940-941 doi:10.1016/0022-0248(88)90651-3
Landgren, G., Rask, M., Andersson, S.G., Lundberg, A. (1988) Abrupt Mg doping profiles in GaAs grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 646-649 doi:10.1016/0022-0248(88)90597-0
Nataf, G., Leroux, M., Laügt, S.M., Gibart, P. (1996) Selective growth of GaAs and Al0.35Ga0.65As on GaAs patterned substrates by HCl assisted low pressure metalorganic vapour phase epitaxy. Journal of Crystal Growth, 165 (1). 1-7 doi:10.1016/0022-0248(96)00172-8
Yoshikawa, Akihiko, Muto, Shin-ichiro, Yamaga, Shigeki, Kasai, Haruo (1988) Growth and properties of lithium-doped ZnSe films by atmospheric pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 697-702 doi:10.1016/0022-0248(88)90606-9
 
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