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(1988) Fourth international conference on metalorganic vapor phase epitaxy ICMOVPE-IV. Journal of Crystal Growth, 93 (1). doi:10.1016/0022-0248(88)90495-2

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Reference TypeJournal (article/letter/editorial)
TitleFourth international conference on metalorganic vapor phase epitaxy ICMOVPE-IV
JournalJournal of Crystal Growth
Year1988Volume93
Issue1
PublisherElsevier BV
DOIdoi:10.1016/0022-0248(88)90495-2Search in ResearchGate
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Mindat Ref. ID2783298Long-form Identifiermindat:1:5:2783298:7
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Full Reference(1988) Fourth international conference on metalorganic vapor phase epitaxy ICMOVPE-IV. Journal of Crystal Growth, 93 (1). doi:10.1016/0022-0248(88)90495-2
Plain Text(1988) Fourth international conference on metalorganic vapor phase epitaxy ICMOVPE-IV. Journal of Crystal Growth, 93 (1). doi:10.1016/0022-0248(88)90495-2
In(1988) Journal of Crystal Growth Vol. 93 (1) Elsevier BV

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(1987) 4th international conference on metalorganic vapor phase epitaxy. Journal of Crystal Growth, 84 (4). 687pp. doi:10.1016/0022-0248(87)90062-5
(2008) Contents of The 14th International conference on Metalorganic Vapor Phase Epitax (ICMOVPE-XIV). Journal of Crystal Growth, 310 (23). doi:10.1016/s0022-0248(08)01126-3
(1989) 5th International conference on metalorganic vapor phase epitaxy (IC-MOVPE 5). Journal of Crystal Growth, 98 (4). 867pp. doi:10.1016/0022-0248(89)90332-1
Matsumoto, Koh, Hikada, Junnichi, Tsunoda, Ryuji (1988) Study of nucleation and growth of clusters on nominal and vicinal (100)GaAs by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 170-176 doi:10.1016/0022-0248(88)90523-4
Landgren, G., Rask, M., Andersson, S.G., Lundberg, A. (1988) Abrupt Mg doping profiles in GaAs grown by metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 646-649 doi:10.1016/0022-0248(88)90597-0
Lee, M.K., Huang, K.C., Wuu, D.S., Tung, H.H., Yu, K.Y. (1988) Growth and characterization of InP/GaAs epilayers on Si substrates by low-pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 539-542 doi:10.1016/0022-0248(88)90580-5
Lum, R.M., Klingert, J.K., Kisker, D.W., Abys, S.M., Stevie, F.A. (1988) 13C isotopic labeling studies of growth mechanisms in the metalorganic vapor phase epitaxy of GaAs. Journal of Crystal Growth, 93 (1). 120-126 doi:10.1016/0022-0248(88)90516-7
Yoshikawa, Akihiko, Muto, Shin-ichiro, Yamaga, Shigeki, Kasai, Haruo (1988) Growth and properties of lithium-doped ZnSe films by atmospheric pressure metalorganic vapor phase epitaxy. Journal of Crystal Growth, 93 (1). 697-702 doi:10.1016/0022-0248(88)90606-9
Ozasa, Kazunari, Yuri, Masaaki, Nishino, Shigehiro, Matsunami, Hiroyuki (1988) Low-vacuum metalorganic vapor phase epitaxy of InGaP and its immiscible growth. Journal of Crystal Growth, 89 (4). 485-495 doi:10.1016/0022-0248(88)90210-2
Sugo, Mitsuru, Yamamoto, Akio, Yamaguchi, Masafumi (1988) Growth of antiphase-domain-free GaP on Si by organometallic vapor phase epitaxy. Journal of Crystal Growth, 88 (2). 229-235 doi:10.1016/0022-0248(88)90280-1
Demeester, P., Ackaert, A., Moerman, I., Baets, R., Lagasse, P. (1988) Metalorganic vapor phase heteroepitaxial growth of (Al)GaAs on InP for device applications. Journal of Crystal Growth, 93 (1). 940-941 doi:10.1016/0022-0248(88)90651-3
 
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