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Xie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985

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Reference TypeJournal (article/letter/editorial)
TitleConvergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsXie, Q. H.Author
Fung, K. K.Author
York, P. K.Author
Fernandez, G. E.Author
Eades, J. A.Author
Coleman, J. J.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103985Search in ResearchGate
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Mindat Ref. ID8492070Long-form Identifiermindat:1:5:8492070:8
GUID0
Full ReferenceXie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985
Plain TextXie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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York, P. K., Beernink, K. J., Fernández, G. E., Coleman, J. J. (1989) InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (6). 499-501 doi:10.1063/1.100935
York, P. K., Beernink, K. J., Kim, J., Coleman, J. J., Fernández, G. E., Wayman, C. M. (1989) Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (24). 2476-2478 doi:10.1063/1.102003
Beernink, K. J., York, P. K., Coleman, J. J. (1989) Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (25). 2585-2587 doi:10.1063/1.101986
Wei, X. L., Fung, K. K., Feng, W., Zhou, J. M. (1992) Characterization of InxGa1−xAs/GaAs strained‐layer superlattices by transmission electron microscopy and convergent beam electron diffraction. Applied Physics Letters, 61 (5). 572-574 doi:10.1063/1.107840
York, P. K., Langsjoen, S. M., Miller, L. M., Beernink, K. J., Alwan, J. J., Coleman, J. J. (1990) Effect of confining layer aluminum composition on AlGaAs‐GaAs‐InGaAs strained‐layer quantum well heterostructure lasers. Applied Physics Letters, 57 (9). 843-845 doi:10.1063/1.103408
York, P. K., Eden, J. G., Coleman, J. J., Fernández, G. E., Beernink, K. J. (1989) Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs. Journal of Applied Physics, 66 (10). 5001-5008 doi:10.1063/1.344467
Xie, Q. H., Fung, K. K., Ding, A. J., Cai, L. H., Huang, Y., Zhou, J. M. (1990) Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 57 (26). 2803-2805 doi:10.1063/1.103792
Feketa, D., Chan, K. T., Ballantyne, J. M., Eastman, L. F. (1986) Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition. Applied Physics Letters, 49 (24). 1659-1660 doi:10.1063/1.97258
York, P. K., Eden, J. G., Coleman, J. J., Fernández, G. E., Beernink, K. J. (1989) Low‐temperature laser photochemical vapor deposition of GaAs. Applied Physics Letters, 54 (19). 1866-1868 doi:10.1063/1.101262
Kim, K. S., Cheong, M. G., Cho, H. K., Suh, E. K., Lee, H. J. (2002) Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 80 (5). 799-801 doi:10.1063/1.1446991
Lambkin, J. D., Dunstan, D. J., Homewood, K. P., Howard, L. K., Emeny, M. T. (1990) Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained‐layer quantum wells. Applied Physics Letters, 57 (19). 1986-1988 doi:10.1063/1.103987
 
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