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York, P. K., Eden, J. G., Coleman, J. J., Fernández, G. E., Beernink, K. J. (1989) Low‐temperature laser photochemical vapor deposition of GaAs. Applied Physics Letters, 54 (19). 1866-1868 doi:10.1063/1.101262

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Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature laser photochemical vapor deposition of GaAs
JournalApplied Physics Letters
AuthorsYork, P. K.Author
Eden, J. G.Author
Coleman, J. J.Author
Fernández, G. E.Author
Beernink, K. J.Author
Year1989 (May 8)Volume54
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.101262Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486552Long-form Identifiermindat:1:5:8486552:6
GUID0
Full ReferenceYork, P. K., Eden, J. G., Coleman, J. J., Fernández, G. E., Beernink, K. J. (1989) Low‐temperature laser photochemical vapor deposition of GaAs. Applied Physics Letters, 54 (19). 1866-1868 doi:10.1063/1.101262
Plain TextYork, P. K., Eden, J. G., Coleman, J. J., Fernández, G. E., Beernink, K. J. (1989) Low‐temperature laser photochemical vapor deposition of GaAs. Applied Physics Letters, 54 (19). 1866-1868 doi:10.1063/1.101262
In(1989, May) Applied Physics Letters Vol. 54 (19) AIP Publishing

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York, P. K., Eden, J. G., Coleman, J. J., Fernández, G. E., Beernink, K. J. (1989) Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs. Journal of Applied Physics, 66 (10). 5001-5008 doi:10.1063/1.344467
York, P. K., Beernink, K. J., Fernández, G. E., Coleman, J. J. (1989) InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition. Applied Physics Letters, 54 (6). 499-501 doi:10.1063/1.100935
York, P. K., Beernink, K. J., Kim, J., Coleman, J. J., Fernández, G. E., Wayman, C. M. (1989) Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (24). 2476-2478 doi:10.1063/1.102003
Beernink, K. J., York, P. K., Coleman, J. J. (1989) Dependence of threshold current density on quantum well composition for strained‐layer InGaAs‐GaAs lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (25). 2585-2587 doi:10.1063/1.101986
Baillargeon, J. N., York, P. K., Zmudzinski, C. A., Fernández, G. E., Beernink, K. J., Coleman, J. J. (1988) High‐power phase‐locked InGaAs strained‐layer quantum well heterostructure periodic laser array. Applied Physics Letters, 53 (6). 457-459 doi:10.1063/1.99883
Beernink, K. J., York, P. K., Coleman, J. J., Waters, R. G., Kim, J., Wayman, C. M. (1989) Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness. Applied Physics Letters, 55 (21). 2167-2169 doi:10.1063/1.102089
Waters, R. G., York, P. K., Beernink, K. J., Coleman, J. J. (1990) Viable strained‐layer laser at λ=1100 nm. Journal of Applied Physics, 67 (2). 1132-1134 doi:10.1063/1.345758
Kiely, C. J., Tavitian, V., Jones, C., Eden, J. G. (1989) NH3as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical vapor deposition. Applied Physics Letters, 55 (1). 65-67 doi:10.1063/1.101755
Xie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985
Kiely, C. J., Tavitian, V., Eden, J. G. (1989) Microstructural studies of epitaxial Ge films grown on [100] GaAs by laser photochemical vapor deposition. Journal of Applied Physics, 65 (10). 3883-3895 doi:10.1063/1.343352
Tavitian, V., Kiely, C. J., Geohegan, D. B., Eden, J. G. (1988) Epitaxial growth of Ge films on GaAs (285–415 °C) by laser photochemical vapor deposition. Applied Physics Letters, 52 (20). 1710-1712 doi:10.1063/1.99025
 
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