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Xie, Q. H., Fung, K. K., Ding, A. J., Cai, L. H., Huang, Y., Zhou, J. M. (1990) Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 57 (26). 2803-2805 doi:10.1063/1.103792

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Reference TypeJournal (article/letter/editorial)
TitleAsymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsXie, Q. H.Author
Fung, K. K.Author
Ding, A. J.Author
Cai, L. H.Author
Huang, Y.Author
Zhou, J. M.Author
Year1990 (December 24)Volume57
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.103792Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492703Long-form Identifiermindat:1:5:8492703:9
GUID0
Full ReferenceXie, Q. H., Fung, K. K., Ding, A. J., Cai, L. H., Huang, Y., Zhou, J. M. (1990) Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 57 (26). 2803-2805 doi:10.1063/1.103792
Plain TextXie, Q. H., Fung, K. K., Ding, A. J., Cai, L. H., Huang, Y., Zhou, J. M. (1990) Asymmetric distribution of microtwins in a GaAs/Si heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 57 (26). 2803-2805 doi:10.1063/1.103792
In(1990, December) Applied Physics Letters Vol. 57 (26) AIP Publishing

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Xie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985
Huang, W., Dai, J. Y., Hao, J. H. (2010) Structural and resistance switching properties of ZnO/SrTiO3/GaAs heterostructure grown by laser molecular beam epitaxy. Applied Physics Letters, 97 (16). 162905pp. doi:10.1063/1.3505136
Cheng, T. M., Chang, C. Y., Huang, J. H. (1995) Substrate orientation dependence of low‐temperature GaAs grown by molecular beam epitaxy. Applied Physics Letters, 66 (1). 55-57 doi:10.1063/1.114181
Leem, J. Y., Son, J. S., Lee, C. R., Kim, C. S., Cho, Y. K., Lee, Hwack J., Noh, S. K., Bae, I. H. (1997) Annealing effects in ZnSe/GaAs heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 71 (22). 3257-3259 doi:10.1063/1.120307
Lee, M. K., Chiu, T. H., Dayem, A., Agyekum, E. (1988) Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy. Applied Physics Letters, 53 (26). 2653-2655 doi:10.1063/1.100184
Adomi, K., Strite, S., Morkoç, H. (1990) Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy. Applied Physics Letters, 56 (5). 469-471 doi:10.1063/1.102768
Li, Z. Q., Chen, H., Liu, H. F., Wan, L., Zhang, M. H., Huang, Q., Zhou, J. M., Yang, N., Tao, K., Han, Y. J., Luo, Y. (2000) Influence of Si doping on optical characteristics of cubic GaN grown on (001) GaAs substrates. Applied Physics Letters, 76 (25). 3765-3767 doi:10.1063/1.126774
Swaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733
Mahavadi, K. K., Bleuse, J., Sivananthan, S., Faurie, J. P. (1990) Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Applied Physics Letters, 56 (21). 2077-2079 doi:10.1063/1.102977
Nottenburg, R., Bühlmann, H. J., Frei, M., Ilegems, M. (1984) Compensation effects in Si‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 44 (1). 71-73 doi:10.1063/1.94556
Cheng, T. M., Chang, C. Y., Chang, T. C., Huang, J. H., Huang, M. F. (1994) High‐resolution x‐ray characterization of low‐temperature GaAs/As superlattice grown by molecular‐beam epitaxy. Applied Physics Letters, 64 (26). 3626-3628 doi:10.1063/1.111225
 
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