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Swaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsSwaminathan, V.Author
Asom, M. T.Author
Livescu, G.Author
Geva, M.Author
Stevie, F. A.Author
Pearton, S. J.Author
Lopata, J.Author
Year1990 (December 31)Volume57
Issue27
PublisherAIP Publishing
DOIdoi:10.1063/1.103733Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492734Long-form Identifiermindat:1:5:8492734:9
GUID0
Full ReferenceSwaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733
Plain TextSwaminathan, V., Asom, M. T., Livescu, G., Geva, M., Stevie, F. A., Pearton, S. J., Lopata, J. (1990) Hydrogen passivation of Si δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (27). 2928-2930 doi:10.1063/1.103733
In(1990, December) Applied Physics Letters Vol. 57 (27) AIP Publishing

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Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817
Asom, M.T., Swaminathan, V., Livescu, G., Geva, M., Luther, L.C., Leibenguth, R.E., Mattera, V.D., Hayes, T. (1991) Hydrogen passivation of delta doped GaAs. Journal of Crystal Growth, 111 (1). 260-263 doi:10.1016/0022-0248(91)90981-a
Chakrabarti, U. K., Pearton, S. J., Hobson, W. S., Lopata, J., Swaminathan, V. (1990) Hydrogenation of GaAs‐on‐InP. Applied Physics Letters, 57 (9). 887-889 doi:10.1063/1.103394
Schubert, E. F., Luftman, H. S., Kopf, R. F., Headrick, R. L., Kuo, J. M. (1990) Secondary‐ion mass spectrometry on δ‐doped GaAs grown by molecular beam epitaxy. Applied Physics Letters, 57 (17). 1799-1801 doi:10.1063/1.104026
Pearton, S. J., Kuo, J. M., Hobson, W. S., Lopata, J., Ren, F., Katz, A., Geva, M. (1991) Dopant passivation in AlInAs and InGaP by atomic deuterium. Applied Physics Letters, 59 (21). 2703-2705 doi:10.1063/1.105890
Dautremont‐Smith, W. C., Lopata, J., Pearton, S. J., Koszi, L. A., Stavola, M., Swaminathan, V. (1989) Hydrogen passivation of acceptors inp‐InP. Journal of Applied Physics, 66 (5). 1993-1996 doi:10.1063/1.344508
Bylsma, R. B., Hobson, W. S., Lopata, J., Zydzik, G. J., Geva, M., Asom, M. T., Pearton, S. J., Thomas, P. M., Bridenbaugh, P. M., Washington, M. A., Roccasecca, D. D., Wilt, D. P. (1994) Carbon‐doped impurity induced layer disorder 0.98 μm lasers. Journal of Applied Physics, 76 (1). 590-592 doi:10.1063/1.357048
Abernathy, C. R., Pearton, S. J., Manasreh, M. O., Fischer, D. W., Talwar, D. N. (1990) Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (3). 294-296 doi:10.1063/1.103718
Lee, W. C., Hsu, T. M., Wang, S. C., Chang, M. N., Chyi, J.-I. (1998) The Fermi level of annealed low-temperature GaAs on Si-δ-doped GaAs grown by molecular beam epitaxy. Journal of Applied Physics, 83 (1). 486-490 doi:10.1063/1.366719
Swaminathan, V., Asom, M. T., Chakrabarti, U. K., Pearton, S. J. (1991) Electron cyclotron resonance plasma‐induced damage in AlGaAs/GaAs/AlGaAs single quantum wells. Applied Physics Letters, 58 (12). 1256-1258 doi:10.1063/1.104328
Zhang, J. M., Cardona, M., Peng, Z. L., Horikoshi, Y. (1997) Raman scattering studies on Si-doped GaAs grown by hydrogen-assisted molecular beam epitaxy. Applied Physics Letters, 71 (13). 1813-1815 doi:10.1063/1.119407
 
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