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Abernathy, C. R., Pearton, S. J., Manasreh, M. O., Fischer, D. W., Talwar, D. N. (1990) Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (3). 294-296 doi:10.1063/1.103718

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Reference TypeJournal (article/letter/editorial)
TitleIncorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy
JournalApplied Physics Letters
AuthorsAbernathy, C. R.Author
Pearton, S. J.Author
Manasreh, M. O.Author
Fischer, D. W.Author
Talwar, D. N.Author
Year1990 (July 16)Volume57
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.103718Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492823Long-form Identifiermindat:1:5:8492823:2
GUID0
Full ReferenceAbernathy, C. R., Pearton, S. J., Manasreh, M. O., Fischer, D. W., Talwar, D. N. (1990) Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (3). 294-296 doi:10.1063/1.103718
Plain TextAbernathy, C. R., Pearton, S. J., Manasreh, M. O., Fischer, D. W., Talwar, D. N. (1990) Incorporation of carbon in heavily doped AlxGa1−xAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (3). 294-296 doi:10.1063/1.103718
In(1990, July) Applied Physics Letters Vol. 57 (3) AIP Publishing

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Kozuch, D. M., Stavola, Michael, Pearton, S. J., Abernathy, C. R., Lopata, J. (1990) Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 57 (24). 2561-2563 doi:10.1063/1.103817
MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Chu, S. N. G. (1995) Annealing behavior of AlxGa1−xAs:C grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (11). 1397-1399 doi:10.1063/1.113213
Abernathy, C. R., MacKenzie, J. D., Pearton, S. J., Hobson, W. S. (1995) CCl4 doping of GaN grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (15). 1969-1971 doi:10.1063/1.113293
Hobson, W. S., Harris, T. D., Abernathy, C. R., Pearton, S. J. (1991) High quality AlxGa1−xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor. Applied Physics Letters, 58 (1). 77-79 doi:10.1063/1.104450
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Ren, F. (1993) Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium. Applied Physics Letters, 62 (3). 258-260 doi:10.1063/1.108982
Abernathy, C. R., Jordan, A. S., Pearton, S. J., Hobson, W. S., Bohling, D. A., Muhr, G. T. (1990) Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane. Applied Physics Letters, 56 (26). 2654-2656 doi:10.1063/1.102866
Pearton, S. J., Abernathy, C. R. (1996) Carbon implantation in AlxGa1−xAs. Applied Physics Letters, 68 (13). 1793-1795 doi:10.1063/1.116015
Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J. (1989) Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy. Applied Physics Letters, 55 (17). 1750-1752 doi:10.1063/1.102206
Ren, F., Abernathy, C. R., Pearton, S. J. (1991) Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy. Journal of Applied Physics, 70 (5). 2885-2886 doi:10.1063/1.349357
MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Krishnamoorthy, V., Bharatan, S., Jones, K. S., Wilson, R. G. (1995) Growth of AlN by metalorganic molecular beam epitaxy. Applied Physics Letters, 67 (2). 253-255 doi:10.1063/1.114684
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
 
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