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Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336

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Reference TypeJournal (article/letter/editorial)
TitleThermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy
JournalApplied Physics Letters
AuthorsAbernathy, C. R.Author
Wisk, P. W.Author
Pearton, S. J.Author
Hobson, W. S.Author
Fuoss, P. H.Author
Lamelas, F. J.Author
Chu, S. N. G.Author
Ren, F.Author
Year1992 (March 16)Volume60
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.107336Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8497941Long-form Identifiermindat:1:5:8497941:2
GUID0
Full ReferenceAbernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
Plain TextAbernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
In(1992, March) Applied Physics Letters Vol. 60 (11) AIP Publishing

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Abernathy, C. R., Wisk, P. W., Pearton, S. J., Ren, F. (1993) Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium. Applied Physics Letters, 62 (3). 258-260 doi:10.1063/1.108982
Abernathy, C. R., Ren, F., Pearton, S. J., Fullowan, T., Wisk, P., Lothian, J. (1992) Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy. Journal of Applied Physics, 71 (3). 1219-1223 doi:10.1063/1.351291
Abernathy, C. R., Wisk, P. W., Ren, F., Pearton, S. J., Jones, A. C., Rushworth, S. A. (1993) Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources. Journal of Applied Physics, 73 (5). 2283-2287 doi:10.1063/1.353133
Abernathy, C. R., MacKenzie, J. D., Pearton, S. J., Hobson, W. S. (1995) CCl4 doping of GaN grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (15). 1969-1971 doi:10.1063/1.113293
Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Luftman, H. S. (1991) Use of ultraviolet/ozone cleaning to remove C and O from GaAs prior to metalorganic molecular beam epitaxy and metalorganic chemical vapor deposition. Applied Physics Letters, 58 (13). 1416-1418 doi:10.1063/1.105184
MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Chu, S. N. G. (1995) Annealing behavior of AlxGa1−xAs:C grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 66 (11). 1397-1399 doi:10.1063/1.113213
Abernathy, C. R., MacKenzie, J. D., Hobson, W. S., Wisk, P. W. (1994) Carbon doping of AlAs using CCl4and CBr4during growth by metalorganic molecular‐beam epitaxy. Applied Physics Letters, 65 (17). 2205-2207 doi:10.1063/1.112762
Pearton, S. J., Abernathy, C. R., Wisk, P. W., Hobson, W. S., Ren, F. (1993) Reversible changes in doping of InGaAlN alloys induced by ion implantation or hydrogenation. Applied Physics Letters, 63 (8). 1143-1145 doi:10.1063/1.109806
Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J. (1989) Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy. Applied Physics Letters, 55 (17). 1750-1752 doi:10.1063/1.102206
Ren, F., Abernathy, C. R., Pearton, S. J., Wisk, P. W. (1994) Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InN. Applied Physics Letters, 64 (12). 1508-1510 doi:10.1063/1.111874
Abernathy, C. R., Wisk, P. W., Bohling, D. A., Muhr, G. T. (1992) Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris‐dimethylaminoarsenic. Applied Physics Letters, 60 (19). 2421-2423 doi:10.1063/1.106992
 
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