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Abernathy, C. R., Ren, F., Pearton, S. J., Fullowan, T., Wisk, P., Lothian, J. (1992) Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy. Journal of Applied Physics, 71 (3). 1219-1223 doi:10.1063/1.351291

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Reference TypeJournal (article/letter/editorial)
TitleGrowth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy
JournalJournal of Applied Physics
AuthorsAbernathy, C. R.Author
Ren, F.Author
Pearton, S. J.Author
Fullowan, T.Author
Wisk, P.Author
Lothian, J.Author
Year1992 (February)Volume71
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.351291Search in ResearchGate
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Mindat Ref. ID5057314Long-form Identifiermindat:1:5:5057314:3
GUID0
Full ReferenceAbernathy, C. R., Ren, F., Pearton, S. J., Fullowan, T., Wisk, P., Lothian, J. (1992) Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy. Journal of Applied Physics, 71 (3). 1219-1223 doi:10.1063/1.351291
Plain TextAbernathy, C. R., Ren, F., Pearton, S. J., Fullowan, T., Wisk, P., Lothian, J. (1992) Growth ofPnpheterojunction bipolar transistor structures by metalorganic molecular beam epitaxy. Journal of Applied Physics, 71 (3). 1219-1223 doi:10.1063/1.351291
In(1992, February) Journal of Applied Physics Vol. 71 (3) AIP Publishing

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Pearton, S. J., Ren, F., Lothian, J. R., Fullowan, T. R., Katz, A., Wisk, P. W., Abernathy, C. R., Kopf, R. F., Elliman, R. G., Ridgway, M. C., Jagadish, C., Williams, J. S. (1992) Use of MeV O+ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors. Journal of Applied Physics, 71 (10). 4949-4954 doi:10.1063/1.350643
Abernathy, C. R., Wisk, P. W., Ren, F., Pearton, S. J., Jones, A. C., Rushworth, S. A. (1993) Growth of InGaP by metalorganic molecular beam epitaxy using novel Ga sources. Journal of Applied Physics, 73 (5). 2283-2287 doi:10.1063/1.353133
Pearton, S. J., Ren, F., Wisk, P. W., Fullowan, T. R., Kopf, R. F., Kuo, J.‐M., Hobson, W. S., Abernathy, C. R. (1991) Characteristics of Be+and O+or H+co‐implantation in GaAs/AlGaAs heterojunction bipolar transistor structures. Journal of Applied Physics, 69 (2). 698-703 doi:10.1063/1.347352
Ren, F., Fullowan, T. R., Lothian, J., Wisk, P. W., Abernathy, C. R., Kopf, R. F., Emerson, A. B., Downey, S. W., Pearton, S. J. (1991) Stability of carbon and beryllium‐doped base GaAs/AlGaAs heterojunction bipolar transistors. Applied Physics Letters, 59 (27). 3613-3615 doi:10.1063/1.105623
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Ren, F. (1993) Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis‐cyclopentadienyl magnesium. Applied Physics Letters, 62 (3). 258-260 doi:10.1063/1.108982
Abernathy, C. R., Wisk, P. W., Pearton, S. J., Hobson, W. S., Fuoss, P. H., Lamelas, F. J., Chu, S. N. G., Ren, F. (1992) Thermal stability of GaAs (C)/InAs superlattices grown by metalorganic molecular beam epitaxy. Applied Physics Letters, 60 (11). 1339-1341 doi:10.1063/1.107336
Ren, F., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J., Yanof, A. W. (1990) Implant isolation of GaAs‐AlGaAs heterojunction bipolar transistor structures. Applied Physics Letters, 56 (9). 860-862 doi:10.1063/1.102683
Elliman, R. G., Ridgway, M. C., Jagadish, C., Pearton, S. J., Ren, F., Lothian, J., Fullowan, T. R., Katz, A., Abernathy, C. R., Kopf, R. F. (1992) Single‐energy, MeV implant isolation of multilayer III‐V device structures. Journal of Applied Physics, 71 (2). 1010-1013 doi:10.1063/1.350436
Ren, F., Abernathy, C. R., Pearton, S. J. (1991) Novel carbon‐dopedp‐channel GaAs metal‐semiconductor field‐effect transistor grown by metalorganic molecular beam epitaxy. Journal of Applied Physics, 70 (5). 2885-2886 doi:10.1063/1.349357
Pearton, S. J., Ren, F., Abernathy, C. R., Hobson, W. S., Fullowan, T. R., Esagui, R., Lothian, J. R. (1992) Damage introduction in InP and InGaAs during Ar and H2plasma exposure. Applied Physics Letters, 61 (5). 586-588 doi:10.1063/1.107845
Abernathy, C. R., Pearton, S. J., Caruso, R., Ren, F., Kovalchik, J. (1989) Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy. Applied Physics Letters, 55 (17). 1750-1752 doi:10.1063/1.102206
 
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