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Schwartz, P. V., Sturm, J. C. (1990) Microsecond carrier lifetimes in strained silicon‐germanium alloys grown by rapid thermal chemical vapor deposition. Applied Physics Letters, 57 (19). 2004-2006 doi:10.1063/1.103991

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Reference TypeJournal (article/letter/editorial)
TitleMicrosecond carrier lifetimes in strained silicon‐germanium alloys grown by rapid thermal chemical vapor deposition
JournalApplied Physics Letters
AuthorsSchwartz, P. V.Author
Sturm, J. C.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103991Search in ResearchGate
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Mindat Ref. ID8492083Long-form Identifiermindat:1:5:8492083:2
GUID0
Full ReferenceSchwartz, P. V., Sturm, J. C. (1990) Microsecond carrier lifetimes in strained silicon‐germanium alloys grown by rapid thermal chemical vapor deposition. Applied Physics Letters, 57 (19). 2004-2006 doi:10.1063/1.103991
Plain TextSchwartz, P. V., Sturm, J. C. (1990) Microsecond carrier lifetimes in strained silicon‐germanium alloys grown by rapid thermal chemical vapor deposition. Applied Physics Letters, 57 (19). 2004-2006 doi:10.1063/1.103991
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Venkataraman, V., Schwartz, P. V., Sturm, J. C. (1991) Symmetric Si/Si1−xGextwo‐dimensional hole gases grown by rapid thermal chemical vapor deposition. Applied Physics Letters, 59 (22). 2871-2873 doi:10.1063/1.105837
Sturm, J. C., Schwartz, P. V., Garone, P. M. (1990) Silicon temperature measurement by infrared transmission for rapid thermal processing applications. Applied Physics Letters, 56 (10). 961-963 doi:10.1063/1.102592
Schwartz, P. V., Liu, C. W., Sturm, J. C. (1993) Semi‐insulating crystalline silicon formed by oxygen doping during low‐temperature chemical vapor deposition. Applied Physics Letters, 62 (10). 1102-1104 doi:10.1063/1.108755
Kordina, O., Bergman, J. P., Henry, A., Janzén, E. (1995) Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition. Applied Physics Letters, 66 (2). 189-191 doi:10.1063/1.113130
Garone, P. M., Sturm, J. C., Schwartz, P. V., Schwarz, S. A., Wilkens, B. J. (1990) Silicon vapor phase epitaxial growth catalysis by the presence of germane. Applied Physics Letters, 56 (13). 1275-1277 doi:10.1063/1.102535
Sturm, J. C., Prinz, E. J., Garone, P. M., Schwartz, P. V. (1989) Band‐gap shifts in silicon‐germanium heterojunction bipolar transistors. Applied Physics Letters, 54 (26). 2707-2709 doi:10.1063/1.101003
Hsieh, T. Y., Jung, K. H., Kwong, D. L. (1990) Silicon epitaxial growth on silicon‐on‐insulator structures by rapid thermal processing chemical vapor deposition. Applied Physics Letters, 57 (23). 2425-2427 doi:10.1063/1.103865
Liu, C. W., Tseng, Y. D., Huang, Y. S. (1999) Substitutional carbon reduction in SiGeC alloys grown by rapid thermal chemical vapor deposition. Applied Physics Letters, 75 (15). 2271-2273 doi:10.1063/1.124987
Xie, Q. H., Fung, K. K., York, P. K., Fernandez, G. E., Eades, J. A., Coleman, J. J. (1990) Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained‐layer superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 57 (19). 1978-1980 doi:10.1063/1.103985
Yang, Min, Carroll, Malcolm, Sturm, J. C., Büyüklimanli, Temel (2000) Phosphorus Doping and Sharp Profiles in Silicon and Silicon-Germanium Epitaxy by Rapid Thermal Chemical Vapor Deposition. Journal of the Electrochemical Society, 147. 3541pp. doi:10.1149/1.1393934
Li, Jiun-Yun, Huang, Chiao-Ti, Sturm, James C. (2012) The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition. Applied Physics Letters, 101 (14). 142112pp. doi:10.1063/1.4757123
 
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