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Schneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989

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Reference TypeJournal (article/letter/editorial)
TitleInAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsSchneider, R. P.Author
Wessels, B. W.Author
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103989Search in ResearchGate
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Mindat Ref. ID8492078Long-form Identifiermindat:1:5:8492078:0
GUID0
Full ReferenceSchneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
Plain TextSchneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

See Also

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Schneider, R. P., Wessels, B. W. (1991) Optical properties of InAs/InP strained single quantum wells grown by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 70 (1). 405-408 doi:10.1063/1.350289
Qian, L. Q., Wessels, B. W. (1993) Strained‐layer InSb/GaSb quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 63 (5). 628-630 doi:10.1063/1.109971
Wang, T. Y., Jen, H. R., Chen, G. S., Stringfellow, G. B. (1990) Structural characterization of very thin GaInAs/InP quantum wells grown by atmospheric pressure organometallic vapor‐phase epitaxy. Journal of Applied Physics, 67 (1). 563-566 doi:10.1063/1.345193
Kuo, C. P., Fry, K. L., Stringfellow, G. B. (1985) GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 47 (8). 855-857 doi:10.1063/1.96008
Wang, T. Y., Stringfellow, G. B. (1990) Strain effects on GaxIn1−xAs/InP single quantum wells grown by organometallic vapor‐phase epitaxy with 0≤x≤1. Journal of Applied Physics, 67 (1). 344-352 doi:10.1063/1.345260
Williams, D. M., Wessels, B. W. (1990) Yb‐doped InP grown by metalorganic vapor phase epitaxy using a beta‐diketonate precursor. Applied Physics Letters, 56 (6). 566-568 doi:10.1063/1.102746
Miller, B. I., Schubert, E. F., Koren, U., Ourmazd, A., Dayem, A. H., Capik, R. J. (1986) High quality narrow GaInAs/InP quantum wells grown by atmospheric organometallic vapor phase epitaxy. Applied Physics Letters, 49 (20). 1384-1386 doi:10.1063/1.97625
Nilsson, S., Gustafsson, A., Samuelson, L. (1990) Cathodoluminescence observation of extended monolayer‐flat terraces at the heterointerface of GaInAs/InP single quantum wells grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 57 (9). 878-880 doi:10.1063/1.103393
Aina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
Seifert, W., Fornell, J.‐O., Ledebo, L., Pistol, M.‐E., Samuelson, L. (1990) Single‐monolayer quantum wells of GaInAs in InP grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 56 (12). 1128-1130 doi:10.1063/1.102589
Aina, Leye, Mattingly, Mike, Potter, Bob (1990) Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (5). 492-493 doi:10.1063/1.103630
 
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