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Aina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsAina, LeyeAuthor
Mattingly, MikeAuthor
Stecker, LisaAuthor
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99930Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484554Long-form Identifiermindat:1:5:8484554:0
GUID0
Full ReferenceAina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
Plain TextAina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Aina, Leye, Mattingly, Mike, Potter, Bob (1990) Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (5). 492-493 doi:10.1063/1.103630
Aina, Leye, Mattingly, Mike (1987) High‐quality InAlAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (20). 1637-1639 doi:10.1063/1.98580
Aina, Leye, Mattingly, M., Potter, Bob (1987) High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (21). 1735-1737 doi:10.1063/1.98559
Aina, Leye, Mattingly, Mike, Pande, Krishna (1986) Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 49 (14). 865-867 doi:10.1063/1.97633
Aina, Leye, Mattingly, Mike (1988) Electron mobilities of AlInAs and AlInAs/InP heterostructures. Journal of Applied Physics, 64 (10). 5253-5255 doi:10.1063/1.342413
Aina, L., Mattingly, M., Burgess, M., Potter, R., O’Connor, J. M. (1991) High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1485-1487 doi:10.1063/1.105295
Aina, Leye, Mattingly, Mike, Fathimulla, Ayub, Martin, Eric A., Loughran, Tom, Stecker, Lisa (1988) OMVPE growth of AlInAs and device quality AlInAs-based heterostructures. Journal of Crystal Growth, 93 (1). 911-918 doi:10.1016/0022-0248(88)90639-2
Aina, O., Mattingly, M., Steinhauser, S., Mariella, R., Melas, Andreas (1988) Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy. Journal of Crystal Growth, 92 (1). 215-221 doi:10.1016/0022-0248(88)90452-6
Kuo, C. P., Fry, K. L., Stringfellow, G. B. (1985) GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 47 (8). 855-857 doi:10.1063/1.96008
Aina, O., Serio, M., Mattingly, M., O’Connor, J., Shastry, S. K., Hill, D. S., Salerno, J. P., Ferm, P. (1991) High‐speed InP/GaInAs heterojunction phototransistor on InP‐on‐Si grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (3). 268-270 doi:10.1063/1.105617
Schneider, R. P., Wessels, B. W. (1990) InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy. Applied Physics Letters, 57 (19). 1998-2000 doi:10.1063/1.103989
 
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