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(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Reference TypeJournal (issue)
JournalApplied Physics Letters
Year1988 (October)Volume53
Issue<   17   >
PublisherAIP Publishing
Mindat Ref. ID8484510Long-form Identifiermindat:1:5:8484510:6
GUID0
Full Reference(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing
Plain Text(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing
In(n.d.) Applied Physics Letters Vol. 53. AIP Publishing

Contains

Marshall, I. W., O’Mahony, M. J., Cooper, D. M., Fiddyment, P. J., Regnault, J. C., Devlin, W. J. (1988) Gain characteristics of a 1.5 ÎŒm nonlinear split contact laser amplifier. Applied Physics Letters, 53 (17). 1577-1579 doi:10.1063/1.99954
Sogawa, T., Arakawa, Y., Tanaka, M., Sakaki, H. (1988) Observation of a short optical pulse (<1.3 ps) from a gain‐switched quantum well laser. Applied Physics Letters, 53 (17). 1580-1582 doi:10.1063/1.99955
Davis, G. M., Gower, M. C., O’Neill, F., Turcu, I. C. E. (1988) Plasma x‐ray source for lithography generated by a ≊30 J, 30 ns KrF laser. Applied Physics Letters, 53 (17). 1583-1585 doi:10.1063/1.99919
Kim, Young‐Soon, Ramaswamy, Ramu V., Sakai, Shiro, Matyi, R. J., Shichijo, H. (1988) GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy. Applied Physics Letters, 53 (17). 1586-1587 doi:10.1063/1.99920
Hansen, S. G., Luckman, G., Colson, Steven D. (1988) Measurements of F*, CF, and CF2formation and decay in pulsed fluorocarbon discharges. Applied Physics Letters, 53 (17). 1588-1590 doi:10.1063/1.100436
Chen, Yea‐jer, Kaesz, Herbert D., Thridandam, Hareesh, Hicks, Robert F. (1988) Low‐temperature organometallic chemical vapor deposition of platinum. Applied Physics Letters, 53 (17). 1591-1592 doi:10.1063/1.99921
Ahn, S. T., Kennel, H. W., Plummer, J. D., Tiller, W. A. (1988) Enhanced Sb diffusion in Si under thermal Si3N4films during annealing in Ar. Applied Physics Letters, 53 (17). 1593-1595 doi:10.1063/1.100439
Wada, Takao, Maeda, Yoshinobu (1988) Ordering of Al0.5Ga0.5P by high‐energy electron irradiation. Applied Physics Letters, 53 (17). 1596-1598 doi:10.1063/1.99922
Ghaisas, S. V., Madhukar, A. (1988) Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study. Applied Physics Letters, 53 (17). 1599-1601 doi:10.1063/1.99923
Ho, P. S., Faupel, F. (1988) Adhesion and deformation study of metal/polymer structures by a stretch deformation method. Applied Physics Letters, 53 (17). 1602-1604 doi:10.1063/1.99924
Harris, Stephen J., Weiner, Anita M., Perry, Thomas A. (1988) Measurement of stable species present during filament‐assisted diamond growth. Applied Physics Letters, 53 (17). 1605-1607 doi:10.1063/1.99925
Maissen, C., Masek, J., Zogg, H., Blunier, S. (1988) Photovoltaic infrared sensors in heteroepitaxial PbTe on Si. Applied Physics Letters, 53 (17). 1608-1610 doi:10.1063/1.99926
Montie, E. A., Thijs, P. J. A., ’t Hooft, G. W. (1988) Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells. Applied Physics Letters, 53 (17). 1611-1613 doi:10.1063/1.99927
Toriyama, Takeshi, Kobayashi, Naoki, Horikoshi, Yoshiji (1988) Low‐frequency resonant Raman scattering in AlAs‐GaAs atomic‐layer superlattices. Applied Physics Letters, 53 (17). 1614-1616 doi:10.1063/1.99928
GuĂ©ret, P., Marclay, E., Meier, H. (1988) Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1−xAs/GaAs tunnel barriers. Applied Physics Letters, 53 (17). 1617-1619 doi:10.1063/1.99929
Aina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
Higman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K., Coleman, J. J. (1988) Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode. Applied Physics Letters, 53 (17). 1623-1625 doi:10.1063/1.99931
Johnson, N. M., Ready, S. E., Boyce, J. B., Doland, C. D., Wolff, S. H., Walker, J. (1988) Hydrogen incorporation in undoped microcrystalline silicon. Applied Physics Letters, 53 (17). 1626-1628 doi:10.1063/1.99932
Bethea, C. G., Levine, B. F., Lu, P.‐Y., Williams, L. M., Ross, M. H. (1988) Photoconductive Hg1−xCdxTe detectors grown by low‐temperature metalorganic chemical vapor deposition. Applied Physics Letters, 53 (17). 1629-1631 doi:10.1063/1.99933
Anderson, K. K., Donnelly, J. P., Wang, C. A., Woodhouse, J. D., Haus, H. A. (1988) Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures. Applied Physics Letters, 53 (17). 1632-1634 doi:10.1063/1.99934
Kahen, K. B., Rajeswaran, G., Lee, S. T. (1988) Mechanism for ion‐induced mixing of GaAs‐AlGaAs interfaces by rapid thermal annealing. Applied Physics Letters, 53 (17). 1635-1637 doi:10.1063/1.99935
Chang, Edward Y., Cibuzar, Gregory T., Vanhove, James M., Nagarajan, Rao M., Pande, Krishna P. (1988) GaAs device passivation using sputtered silicon nitride. Applied Physics Letters, 53 (17). 1638-1640 doi:10.1063/1.100402
Ghandhi, S. K., Taskar, N. R., Parat, K. K., Terry, D., Bhat, I. B. (1988) Extrinsicp‐type doping of HgCdTe grown by organometallic epitaxy. Applied Physics Letters, 53 (17). 1641-1643 doi:10.1063/1.99936
Shepard, K., Smith, Z E., Aljishi, S., Wagner, S. (1988) Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon. Applied Physics Letters, 53 (17). 1644-1646 doi:10.1063/1.99937
Kalem, Seref, Chyi, Jen‐Inn, Morkoç, Hadis, Bean, Ross, Zanio, Ken (1988) Growth and transport properties of InAs epilayers on GaAs. Applied Physics Letters, 53 (17). 1647-1649 doi:10.1063/1.99938
Dunn, G. J. (1988) Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing. Applied Physics Letters, 53 (17). 1650-1651 doi:10.1063/1.100440
Borroff, R., Merlin, R., Chin, A., Bhattacharya, P. K. (1988) Raman scattering by optical phonons in In1−y−zAlyGazAs lattice matched to InP. Applied Physics Letters, 53 (17). 1652-1653 doi:10.1063/1.100441
Lorentz, Robert D., Sexton, J. H. (1988) Oriented high‐temperature superconducting Bi‐Sr‐Ca‐Cu‐O thin films prepared by ion beam deposition. Applied Physics Letters, 53 (17). 1654-1656 doi:10.1063/1.100442
Hill, D. M., Meyer, H. M., Weaver, J. H., Nelson, D. L. (1988) Passivation of highTcsuperconductor surfaces with CaF2and Bi, Al, and Si oxides. Applied Physics Letters, 53 (17). 1657-1659 doi:10.1063/1.100390
Schlom, D. G., Eckstein, J. N., Hellman, E. S., Streiffer, S. K., Harris, J. S., Beasley, M. R., Bravman, J. C., Geballe, T. H., Webb, C., von Dessonneck, K. E., Turner, F. (1988) Molecular beam epitaxy of layered Dy‐Ba‐Cu‐O compounds. Applied Physics Letters, 53 (17). 1660-1662 doi:10.1063/1.100443
Osofsky, M. S., Lubitz, P., Harford, M. Z., Singh, A. K., Qadri, S. B., Skelton, E. F., Elam, W. T., Soulen, R. J., Lechter, W. L., Wolf, S. A. (1988) Thin‐film highTcsuperconductors prepared by a simple flash evaporation technique. Applied Physics Letters, 53 (17). 1663-1664 doi:10.1063/1.100468
Pelletier, J. (1988) Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]. Applied Physics Letters, 53 (17). 1665-1666 doi:10.1063/1.99792
Tachi, Shinichi, Tsujimoto, Kazunori, Okudaira, Sadayuki (1988) Response to ‘‘Comment on ‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett.53, 1665 (1988)]. Applied Physics Letters, 53 (17). 1666-1667 doi:10.1063/1.99793

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