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Higman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K., Coleman, J. J. (1988) Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode. Applied Physics Letters, 53 (17). 1623-1625 doi:10.1063/1.99931

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Reference TypeJournal (article/letter/editorial)
TitleRoom‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode
JournalApplied Physics Letters
AuthorsHigman, T. K.Author
Miller, L. M.Author
Favaro, M. E.Author
Emanuel, M. A.Author
Hess, K.Author
Coleman, J. J.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99931Search in ResearchGate
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Mindat Ref. ID8484557Long-form Identifiermindat:1:5:8484557:7
GUID0
Full ReferenceHigman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K., Coleman, J. J. (1988) Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode. Applied Physics Letters, 53 (17). 1623-1625 doi:10.1063/1.99931
Plain TextHigman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K., Coleman, J. J. (1988) Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode. Applied Physics Letters, 53 (17). 1623-1625 doi:10.1063/1.99931
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Higman, T. K., Higman, J. M., Emanuel, M. A., Hess, K., Coleman, J. J. (1987) Theoretical and experimental analysis of the switching mechanism in heterostructure hot‐electron diodes. Journal of Applied Physics, 62 (4). 1495-1499 doi:10.1063/1.339630
Higman, T. K., Favaro, M. E., Miller, L. M., Emanuel, M. A., Coleman, J. J. (1989) Observation of apparent inelastic tunneling between Landau levels in superlattices. Applied Physics Letters, 54 (18). 1751-1753 doi:10.1063/1.101280
Favaro, M. E., Fernández, G. E., Higman, T. K., York, P. K., Miller, L. M., Coleman, J. J. (1989) Strained layer InGaAs channel negative‐resistance field‐effect transistor. Journal of Applied Physics, 65 (1). 378-380 doi:10.1063/1.342552
Hess, K., Higman, T. K., Emanuel, M. A., Coleman, J. J. (1986) New ultrafast switching mechanism in semiconductor heterostructures. Journal of Applied Physics, 60 (10). 3775-3777 doi:10.1063/1.337540
Arnold, D., Hess, K., Higman, T., Coleman, J. J., Iafrate, G. J. (1989) Dynamics of heterostructure hot‐electron diodes. Journal of Applied Physics, 66 (3). 1423-1427 doi:10.1063/1.344446
Favaro, M. E., Miller, L. M., Bryan, R. P., Alwan, J. J., Coleman, J. J. (1990) p‐channel negative resistance field‐effect transistor. Applied Physics Letters, 56 (11). 1058-1060 doi:10.1063/1.102564
Oehme, M., Karmous, A., Sarlija, M., Werner, J., Kasper, E., Schulze, J. (2010) Ge quantum dot tunneling diode with room temperature negative differential resistance. Applied Physics Letters, 97 (1). 12101pp. doi:10.1063/1.3462069
Arnold, D., Hess, K., Iafrate, G. J. (1988) Electron transport in heterostructure hot‐electron diodes. Applied Physics Letters, 53 (5). 373-375 doi:10.1063/1.99898
Higman, T. K., Manion, S. J., Kizilyalli, I. C., Emanuel, M. A., Hess, K., Coleman, J. J. (1987) Observation of the transition associated with real-space transfer of a two-dimensional electron gas to a three-dimensional electron distribution in semiconductor heterolayers. Physical Review B, 36 (17) 9381-9383 doi:10.1103/physrevb.36.9381
Bryan, R. P., Miller, L. M., Cockerill, T. M., Coleman, J. J. (1989) Nonplanar quantum well heterostructure window laser. Applied Physics Letters, 54 (17). 1634-1636 doi:10.1063/1.101307
Tanaka, M., Tsuda, M., Nishinaga, T., Palmstro/m, C. J. (1996) Room‐temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs. Applied Physics Letters, 68 (1). 84-86 doi:10.1063/1.116766
 
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