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Higman, T. K., Favaro, M. E., Miller, L. M., Emanuel, M. A., Coleman, J. J. (1989) Observation of apparent inelastic tunneling between Landau levels in superlattices. Applied Physics Letters, 54 (18). 1751-1753 doi:10.1063/1.101280

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Reference TypeJournal (article/letter/editorial)
TitleObservation of apparent inelastic tunneling between Landau levels in superlattices
JournalApplied Physics Letters
AuthorsHigman, T. K.Author
Favaro, M. E.Author
Miller, L. M.Author
Emanuel, M. A.Author
Coleman, J. J.Author
Year1989 (May)Volume54
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.101280Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8486459Long-form Identifiermindat:1:5:8486459:0
GUID0
Full ReferenceHigman, T. K., Favaro, M. E., Miller, L. M., Emanuel, M. A., Coleman, J. J. (1989) Observation of apparent inelastic tunneling between Landau levels in superlattices. Applied Physics Letters, 54 (18). 1751-1753 doi:10.1063/1.101280
Plain TextHigman, T. K., Favaro, M. E., Miller, L. M., Emanuel, M. A., Coleman, J. J. (1989) Observation of apparent inelastic tunneling between Landau levels in superlattices. Applied Physics Letters, 54 (18). 1751-1753 doi:10.1063/1.101280
In(1989, May) Applied Physics Letters Vol. 54 (18) AIP Publishing

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Higman, T. K., Miller, L. M., Favaro, M. E., Emanuel, M. A., Hess, K., Coleman, J. J. (1988) Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode. Applied Physics Letters, 53 (17). 1623-1625 doi:10.1063/1.99931
Favaro, M. E., Fernández, G. E., Higman, T. K., York, P. K., Miller, L. M., Coleman, J. J. (1989) Strained layer InGaAs channel negative‐resistance field‐effect transistor. Journal of Applied Physics, 65 (1). 378-380 doi:10.1063/1.342552
Swanson, P. D., Tang, T. K., Givens, M. E., Miller, L. M., DeTemple, T. A., Coleman, J. J. (1989) Electroabsorption in single quantum well GaAs laser structures. Applied Physics Letters, 54 (18). 1716-1718 doi:10.1063/1.101291
Higman, T. K., Higman, J. M., Emanuel, M. A., Hess, K., Coleman, J. J. (1987) Theoretical and experimental analysis of the switching mechanism in heterostructure hot‐electron diodes. Journal of Applied Physics, 62 (4). 1495-1499 doi:10.1063/1.339630
Hess, K., Higman, T. K., Emanuel, M. A., Coleman, J. J. (1986) New ultrafast switching mechanism in semiconductor heterostructures. Journal of Applied Physics, 60 (10). 3775-3777 doi:10.1063/1.337540
Bryan, R. P., Miller, L. M., Cockerill, T. M., Coleman, J. J. (1989) Nonplanar quantum well heterostructure window laser. Applied Physics Letters, 54 (17). 1634-1636 doi:10.1063/1.101307
Favaro, M. E., Miller, L. M., Bryan, R. P., Alwan, J. J., Coleman, J. J. (1990) p‐channel negative resistance field‐effect transistor. Applied Physics Letters, 56 (11). 1058-1060 doi:10.1063/1.102564
Miller, L. M., Beernink, K. J., Cockerill, T. M., Bryan, R. P., Favaro, M. E., Kim, J., Coleman, J. J., Wayman, C. M. (1990) Characteristics of step‐graded separate confinement quantum well lasers with direct and indirect barriers. Journal of Applied Physics, 68 (5). 1964-1967 doi:10.1063/1.347178
Higman, T. K., Emanuel, M. A., Coleman, J. J., Jeng, S. J., Wayman, C. M. (1986) Structural analysis of Au–Ni–Ge and Au–Ag–Ge alloyed ohmic contacts on modulation‐doped AlGaAs–GaAs heterostructures. Journal of Applied Physics, 60 (2). 677-680 doi:10.1063/1.337413
Martin, P. A., Hess, K., Emanuel, M., Coleman, J. J. (1986) Deep‐level transient spectroscopy studies of defects in GaAs‐AlGaAs superlattices. Journal of Applied Physics, 60 (8). 2882-2885 doi:10.1063/1.337073
Ghadiri, M. M., Bryan, R. P., Miller, L. M., Tang, T., Givens, M. E., DeTemple, T. A., Coleman, J. J. (1989) MeV implantation masking using an aluminum gallium arsenide metal liftoff layer. Journal of Applied Physics, 66 (2). 982-983 doi:10.1063/1.343480
 
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