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Guéret, P., Marclay, E., Meier, H. (1988) Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1−xAs/GaAs tunnel barriers. Applied Physics Letters, 53 (17). 1617-1619 doi:10.1063/1.99929

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Reference TypeJournal (article/letter/editorial)
TitleExperimental observation of the dynamical image potential in extremely low GaAs/AlxGa1−xAs/GaAs tunnel barriers
JournalApplied Physics Letters
AuthorsGuéret, P.Author
Marclay, E.Author
Meier, H.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99929Search in ResearchGate
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Mindat Ref. ID8484552Long-form Identifiermindat:1:5:8484552:2
GUID0
Full ReferenceGuéret, P., Marclay, E., Meier, H. (1988) Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1−xAs/GaAs tunnel barriers. Applied Physics Letters, 53 (17). 1617-1619 doi:10.1063/1.99929
Plain TextGuéret, P., Marclay, E., Meier, H. (1988) Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1−xAs/GaAs tunnel barriers. Applied Physics Letters, 53 (17). 1617-1619 doi:10.1063/1.99929
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Zimmermann, B., Marclay, E., Ilegems, M., Guéret, P. (1988) Self‐consistent calculations of tunneling currents inn+‐GaAs/i‐ AlxGa1−xAs/n+‐GaAs structures and comparison with measurements. Journal of Applied Physics, 64 (7). 3581-3588 doi:10.1063/1.342488
Guéret, P., Rossel, C., Marclay, E., Meier, H. (1989) Investigations on resonant tunneling in III‐V heterostructures. Journal of Applied Physics, 66 (1). 278-285 doi:10.1063/1.343869
Hoenk, Michael E., Vahala, Kerry J. (1988) Cathodoluminescence of oval defects in GaAs/AlxGa1−xAs epilayers using an optical fiber light collection system. Applied Physics Letters, 53 (21). 2062-2064 doi:10.1063/1.100319
Chen, H. Z., Wang, H., Ghaffari, A., Morkoç, H., Yariv, A. (1987) Measurement of Au/GaAs/AlxGa1−xAs hetero‐Schottky barrier height and GaAs/AlxGa1−xAs conduction‐band discontinuity. Applied Physics Letters, 51 (13). 990-991 doi:10.1063/1.98785
Chen, J., Yang, C. H., Wilson, R. A., Yang, M. J. (1992) Observation of negative persistent photoconductivity in ann‐channel GaAs/AlxGa1−xAs single heterojunction. Applied Physics Letters, 60 (17). 2113-2115 doi:10.1063/1.107106
Guéret, P, Baratoff, A, Marclay, E (1987) Effect of a Transverse Magnetic Field on the Tunnel Current through Thick and Low Semiconductor Barriers. Europhysics Letters (EPL), 3. 367-372 doi:10.1209/0295-5075/3/3/019
Zohta, Yasuhito (1988) Analysis of Thermionic Emission Current over the AlxGa1-xAs Barrier in a GaAs/AlxGa1-xAs/GaAs (x>0.45) Structure. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l906
Pearsall, T. P. (1998) Impact ionization in AlxGa1−xAs/GaAs superlattices. Applied Physics Letters, 73 (9). 1227-1229 doi:10.1063/1.122135
Lu, S. S., Lee, K., Nathan, M. I., Heiblum, M., Wright, S. L. (1989) Uniaxial stress dependence of current‐voltage characteristics in GaAs‐AlxGa1−xAs‐GaAs heterojunction barriers. Applied Physics Letters, 55 (13). 1336-1338 doi:10.1063/1.101648
Peterson, M. W., Turner, J. A., Parsons, C. A., Nozik, A. J., Arent, D. J., Van Hoof, C., Borghs, G., Houdré, R., Morkoç, H. (1988) Miniband dispersion in GaAs/AlxGa1−xAs superlattices with wide wells and very thin barriers. Applied Physics Letters, 53 (26). 2666-2668 doi:10.1063/1.100189
Howarth, D. S., Feucht, D. L. (1973) Barrier determinations on Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs p‐n heterojunctions. Applied Physics Letters, 23 (7). 365-367 doi:10.1063/1.1654921
 
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