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Montie, E. A., Thijs, P. J. A., ’t Hooft, G. W. (1988) Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells. Applied Physics Letters, 53 (17). 1611-1613 doi:10.1063/1.99927

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells
JournalApplied Physics Letters
AuthorsMontie, E. A.Author
Thijs, P. J. A.Author
’t Hooft, G. W.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99927Search in ResearchGate
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Mindat Ref. ID8484549Long-form Identifiermindat:1:5:8484549:8
GUID0
Full ReferenceMontie, E. A., Thijs, P. J. A., ’t Hooft, G. W. (1988) Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells. Applied Physics Letters, 53 (17). 1611-1613 doi:10.1063/1.99927
Plain TextMontie, E. A., Thijs, P. J. A., ’t Hooft, G. W. (1988) Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells. Applied Physics Letters, 53 (17). 1611-1613 doi:10.1063/1.99927
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Thijs, P. J. A., Montie, E. A., van Kesteren, H. W., ’t Hooft, G. W. (1988) Atomic abruptness in InGaAsP/InP quantum well heterointerfaces grown by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 53 (11). 971-973 doi:10.1063/1.100084
Roth, A. P., Lévesque, P., Syme, R. W. G., Lockwood, D. J., Aers, G. C., Rao, T. S., Lacelle, C. (1996) Structural and optical characterization of InP/GaxIn1−xAsyP1−yquantum wells and interfacial layers. Journal of Applied Physics, 80 (7). 4033-4039 doi:10.1063/1.363363
Żytkiewicz, Z. R. (1979) Lattice matching in GaxIn1−xAsyP1−y-GaAs and GaxIn1−xAsyP1−y-InP structures. physica status solidi (a), 53 (2). doi:10.1002/pssa.2210530249
Pearsall, T. P., Eaves, L., Portal, J. C. (1983) Photoluminescence and impurity concentration in GaxIn1−xAsyP1−yalloys lattice‐matched to InP. Journal of Applied Physics, 54 (2). 1037-1047 doi:10.1063/1.332122
Oelgart, G., Knauer, A., Oster, A., Weyers, M. (1998) Photoluminescence on ordered GaxIn1−xAsyP1−y. Journal of Applied Physics, 84 (3). 1588-1594 doi:10.1063/1.368228
Aina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
Lin, Z. H., Wang, T. Y., Stringfellow, G. B., Taylor, P. C. (1988) Exciton binding energies in GaInAs/InP quantum wells determined by thermally modulated photoluminescence. Applied Physics Letters, 52 (19). 1590-1592 doi:10.1063/1.99090
Tsang, W. T., Schubert, E. F., Chiu, T. H., Cunningham, J. E., Burkhardt, E. G., Ditzenberger, J. A., Agyekum, E. (1987) Growth of high‐quality GaxIn1−xAsyP1−yby chemical beam epitaxy. Applied Physics Letters, 51 (10). 761-763 doi:10.1063/1.98859
Montie, E. A., van Gurp, G. J. (1989) Photoluminescence of Zn‐diffused and annealed InP. Journal of Applied Physics, 66 (11). 5549-5553 doi:10.1063/1.343659
Dalfors, J., Lundström, T., Holtz, P. O., Radamson, H. H., Monemar, B., Wallin, J., Landgren, G. (1996) The electronic structure of InGaAs/InP quantum wells measured by Fourier transform photoluminescence excitation spectroscopy. Journal of Applied Physics, 80 (12). 6855-6860 doi:10.1063/1.363752
Benzaquen, R., Charbonneau, S., Sawadsky, N., Roth, A. P., Leonelli, R., Hobbs, L., Knight, G. (1994) Alloy broadening in photoluminescence spectra of GaxIn1−xAsyP1−ylattice matched to InP. Journal of Applied Physics, 75 (5). 2633-2639 doi:10.1063/1.356239
 
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