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Dunn, G. J. (1988) Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing. Applied Physics Letters, 53 (17). 1650-1651 doi:10.1063/1.100440

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Reference TypeJournal (article/letter/editorial)
TitleGeneration of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing
JournalApplied Physics Letters
AuthorsDunn, G. J.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.100440Search in ResearchGate
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Mindat Ref. ID8484519Long-form Identifiermindat:1:5:8484519:7
GUID0
Full ReferenceDunn, G. J. (1988) Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing. Applied Physics Letters, 53 (17). 1650-1651 doi:10.1063/1.100440
Plain TextDunn, G. J. (1988) Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing. Applied Physics Letters, 53 (17). 1650-1651 doi:10.1063/1.100440
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Dunn, G. J., Jayaraman, R., Yang, W., Sodini, C. G. (1988) Radiation effects in low‐pressure reoxidized nitrided oxide gate dielectrics. Applied Physics Letters, 52 (20). 1713-1715 doi:10.1063/1.99711
Krisch, K. S., Sodini, C. G. (1994) Suppression of interface‐state generation in reoxidized nitrided oxide gate dielectrics. Journal of Applied Physics, 76 (4). 2284-2292 doi:10.1063/1.357648
Nishioka, Yasushiro, Ohji, Yuzuru, Yoshida, Ikuo, Mukai, Kiichiro, Sugano, Takuo (1990) Effects of oxide‐trapped charges and interface trap generation in metal/oxide/semiconductor structures with ultradry oxides after Fowler–Nordheim stressing. Journal of Applied Physics, 67 (8). 3903-3905 doi:10.1063/1.344998
Horiguchi, Seiji, Kobayashi, Toshio, Saito, Kazuyuki (1985) Interface‐trap generation modeling of Fowler–Nordheim tunnel injection into ultrathin gate oxide. Journal of Applied Physics, 58 (1). 387-391 doi:10.1063/1.335690
El Hdiy, A., Salace, G., Petit, C., Jourdain, M., Meinertzhagen, A. (1993) Relaxation of interface states and positive charge in thin gate oxide after Fowler–Nordheim stress. Journal of Applied Physics, 73 (7). 3569-3570 doi:10.1063/1.352911
Krisch, K. S., Gross, B. J., Sodini, C. G. (1991) Positive‐charge trapping in nitrided oxide and reoxidized nitrided oxide gate dielectrics. Journal of Applied Physics, 70 (4). 2185-2194 doi:10.1063/1.349457
Chen, C. W., Fang, Y. K., Lee, G. Y., Hsieh, J. C., Liang, M. S. (1995) Extra interface state generation enhanced by fluorine in tungsten‐polycided metal‐oxide‐semiconductor devices with nitrided oxide gate dielectric. Applied Physics Letters, 67 (10). 1456-1458 doi:10.1063/1.114493
Cubaynes, F. N., Venezia, V. C., van der Marel, C., Snijders, J. H. M., Everaert, J. L., Shi, X., Rothschild, A., Schaekers, M. (2005) Plasma-nitrided silicon-rich oxide as an extension to ultrathin nitrided oxide gate dielectrics. Applied Physics Letters, 86 (17). 172903pp. doi:10.1063/1.1915523
Chen, T P, Huang, Jiayi, Tse, M S (2002) Influence of nitrogen concentration in nitrided oxides on interface trap generation caused by Fowler-Nordheim injection. Journal of Physics D: Applied Physics, 35. doi:10.1088/0022-3727/35/22/101
Bhat, N., Vasi, J. (1992) Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors. IEEE Transactions on Nuclear Science, 39 (6) 2230-2235 doi:10.1109/23.211425
Zhu, Shiyang, Nakajima, Anri, Ohashi, Takuo, Miyake, Hideharu (2005) Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics. Journal of Applied Physics, 98 (11). 114504pp. doi:10.1063/1.2138372
 
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