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Johnson, N. M., Ready, S. E., Boyce, J. B., Doland, C. D., Wolff, S. H., Walker, J. (1988) Hydrogen incorporation in undoped microcrystalline silicon. Applied Physics Letters, 53 (17). 1626-1628 doi:10.1063/1.99932

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Reference TypeJournal (article/letter/editorial)
TitleHydrogen incorporation in undoped microcrystalline silicon
JournalApplied Physics Letters
AuthorsJohnson, N. M.Author
Ready, S. E.Author
Boyce, J. B.Author
Doland, C. D.Author
Wolff, S. H.Author
Walker, J.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99932Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484558Long-form Identifiermindat:1:5:8484558:6
GUID0
Full ReferenceJohnson, N. M., Ready, S. E., Boyce, J. B., Doland, C. D., Wolff, S. H., Walker, J. (1988) Hydrogen incorporation in undoped microcrystalline silicon. Applied Physics Letters, 53 (17). 1626-1628 doi:10.1063/1.99932
Plain TextJohnson, N. M., Ready, S. E., Boyce, J. B., Doland, C. D., Wolff, S. H., Walker, J. (1988) Hydrogen incorporation in undoped microcrystalline silicon. Applied Physics Letters, 53 (17). 1626-1628 doi:10.1063/1.99932
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Johnson, N. M., Walker, J., Doland, C. M., Winer, K., Street, R. A. (1989) Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma. Applied Physics Letters, 54 (19). 1872-1874 doi:10.1063/1.101264
Brandt, M. S., Ready, S. E., Boyce, J. B. (1997) 29Si nuclear magnetic resonance of luminescent silicon. Applied Physics Letters, 70 (2). 188-190 doi:10.1063/1.118199
Boyce, J. B., Johnson, N. M., Ready, S. E., Walker, J. (1992) Local bonding structure of deuterium in single-crystal silicon determined by nuclear magnetic resonance. Physical Review B, 46 (7) 4308-4311 doi:10.1103/physrevb.46.4308
Heyman, J. N., Ager III, J. W., Haller, E. E., Johnson, N. M., Walker, J., Doland, C. M. (1992) Hydrogen-induced platelets in silicon: Infrared absorption and Raman scattering. Physical Review B, 45 (23) 13363-13366 doi:10.1103/physrevb.45.13363
McCluskey, M. D., Haller, E. E., Walker, J., Johnson, N. M. (1994) Spectroscopy of hydrogen‐related complexes in GaP:Zn. Applied Physics Letters, 65 (17). 2191-2192 doi:10.1063/1.112758
Kuiper, A. E. T., Willemsen, M. F. C., van IJzendoorn, L. J. (1988) Hydrogen incorporation in silicon (oxy)nitride thin films. Applied Physics Letters, 53 (22). 2149-2151 doi:10.1063/1.100301
Winer, K., Anderson, G. B., Ready, S. E., Bachrach, R. Z., Johnson, R. I., Ponce, F. A., Boyce, J. B. (1990) Excimer‐laser‐induced crystallization of hydrogenated amorphous silicon. Applied Physics Letters, 57 (21). 2222-2224 doi:10.1063/1.103897
Mei, P., Boyce, J. B., Hack, M., Lujan, R. A., Johnson, R. I., Anderson, G. B., Fork, D. K., Ready, S. E. (1994) Laser dehydrogenation/crystallization of plasma‐enhanced chemical vapor deposited amorphous silicon for hybrid thin film transistors. Applied Physics Letters, 64 (9). 1132-1134 doi:10.1063/1.110829
Mei, P., Boyce, J. B., Hack, M., Lujan, R., Ready, S. E., Fork, D. K., Johnson, R. I., Anderson, G. B. (1994) Grain growth in laser dehydrogenated and crystallized polycrystalline silicon for thin film transistors. Journal of Applied Physics, 76 (5). 3194-3199 doi:10.1063/1.357505
Wolff, S. H., Wagner, S., Bean, J. C., Hull, R., Gibson, J. M. (1989) Hydrogen surface coverage: Raising the silicon epitaxial growth temperature. Applied Physics Letters, 55 (19). 2017-2019 doi:10.1063/1.102149
Kirby, P. B., Simpson, M. B., Wilcox, J. D., Smith, R. S., Kerr, T. M., Miller, B. A., Wood, C. E. C. (1988) Photoluminescence study on undoped single quantum well pseudomorphic structures. Applied Physics Letters, 53 (22). 2158-2160 doi:10.1063/1.100304
 
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