Vote for your favorite mineral in #MinCup25! - Sanidine vs. Hematite
entice people to vote
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Ghaisas, S. V., Madhukar, A. (1988) Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study. Applied Physics Letters, 53 (17). 1599-1601 doi:10.1063/1.99923

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleInfluence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study
JournalApplied Physics Letters
AuthorsGhaisas, S. V.Author
Madhukar, A.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99923Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484540Long-form Identifiermindat:1:5:8484540:7
GUID0
Full ReferenceGhaisas, S. V., Madhukar, A. (1988) Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study. Applied Physics Letters, 53 (17). 1599-1601 doi:10.1063/1.99923
Plain TextGhaisas, S. V., Madhukar, A. (1988) Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study. Applied Physics Letters, 53 (17). 1599-1601 doi:10.1063/1.99923
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Ghaisas, S. V., Madhukar, A. (1989) Surface kinetics and growth interruption in molecular‐beam epitaxy of compound semiconductors: A computer simulation study. Journal of Applied Physics, 65 (10). 3872-3876 doi:10.1063/1.343350
Ogale, S. B., Madhukar, A. (1989) Low‐energy ion beam effects on the molecular beam epitaxical growth of III‐V compound semiconductors: A Monte Carlo simulation study. Applied Physics Letters, 55 (11). 1115-1117 doi:10.1063/1.101674
Ghaisas, S. V., Madhukar, A. (1989) Nature of the oscillatory surface smoothness and its consequence during molecular‐beam epitaxy of strained layers: A computer simulation study. Journal of Applied Physics, 65 (5). 1888-1892 doi:10.1063/1.342899
Guha, S., Madhukar, A. (1993) An explanation for the directionality of interfacet migration during molecular beam epitaxical growth on patterned substrates. Journal of Applied Physics, 73 (12). 8662-8664 doi:10.1063/1.353353
Madhukar, A., Lee, T. C., Yen, M. Y., Chen, P., Kim, J. Y., Ghaisas, S. V., Newman, P. G. (1985) Role of surface kinetics and interrupted growth during molecular beam epitaxial growth of normal and inverted GaAs/AlGaAs(100) interfaces: A reflection high‐energy electron diffraction intensity dynamics study. Applied Physics Letters, 46 (12). 1148-1150 doi:10.1063/1.95739
Guha, S., Madhukar, A., Rajkumar, K. C. (1990) Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100). Applied Physics Letters, 57 (20). 2110-2112 doi:10.1063/1.103914
Madhukar, A., Ghaisas, S. V. (1985) Implications of the configuration‐dependent reactive incorporation growth process for the group V pressure and substrate temperature dependence of III‐V molecular beam epitaxial growth and the dynamics of the reflection high‐energy electron diffraction intensity. Applied Physics Letters, 47 (3). 247-249 doi:10.1063/1.96234
Xie, Qianghua, Chen, P., Madhukar, A. (1994) InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth. Applied Physics Letters, 65 (16). 2051-2053 doi:10.1063/1.112790
Novåk, J., Hasenöhrl, S., Alonso, M. I., Garriga, M. (2001) Influence of tensile and compressive strain on the band gap energy of ordered InGaP. Applied Physics Letters, 79 (17). 2758-2760 doi:10.1063/1.1413725
Ogale, S. B., Madhukar, A., Thomsen, M. (1987) Molecular beam epitaxial growth of III‐V compound semiconductor in the presence of a low‐energy ion beam: A Monte Carlo simulation study. Applied Physics Letters, 51 (11). 837-839 doi:10.1063/1.98829
Rajkumar, K. C., Madhukar, A., Rammohan, K., Rich, D. H., Chen, P., Chen, L. (1993) Optically active three‐dimensionally confined structures realized via molecular beam epitaxical growth on nonplanar GaAs (111)B. Applied Physics Letters, 63 (21). 2905-2907 doi:10.1063/1.110268
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 7, 2025 00:23:45
Go to top of page