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Chang, Edward Y., Cibuzar, Gregory T., Vanhove, James M., Nagarajan, Rao M., Pande, Krishna P. (1988) GaAs device passivation using sputtered silicon nitride. Applied Physics Letters, 53 (17). 1638-1640 doi:10.1063/1.100402

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Reference TypeJournal (article/letter/editorial)
TitleGaAs device passivation using sputtered silicon nitride
JournalApplied Physics Letters
AuthorsChang, Edward Y.Author
Cibuzar, Gregory T.Author
Vanhove, James M.Author
Nagarajan, Rao M.Author
Pande, Krishna P.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.100402Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484512Long-form Identifiermindat:1:5:8484512:4
GUID0
Full ReferenceChang, Edward Y., Cibuzar, Gregory T., Vanhove, James M., Nagarajan, Rao M., Pande, Krishna P. (1988) GaAs device passivation using sputtered silicon nitride. Applied Physics Letters, 53 (17). 1638-1640 doi:10.1063/1.100402
Plain TextChang, Edward Y., Cibuzar, Gregory T., Vanhove, James M., Nagarajan, Rao M., Pande, Krishna P. (1988) GaAs device passivation using sputtered silicon nitride. Applied Physics Letters, 53 (17). 1638-1640 doi:10.1063/1.100402
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Pande, K. P., Hsu, Y‐S., Borrego, J. M., Ghandhi, S. K. (1978) Grain‐boundary edge passivation of GaAs films by selective anodization. Applied Physics Letters, 33 (8). 717-719 doi:10.1063/1.90513
Ghandhi, S. K., Borrego, J. M., Reep, D., Hsu, Y‐S., Pande, K. P. (1979) Thin‐film GaAs solar cells with grain‐boundary edge passivation. Applied Physics Letters, 34 (10). 699-701 doi:10.1063/1.90610
Stepanov, Dmitri S., Kherani, Nazir P. (2012) Optimal hydrogenated amorphous silicon/silicon nitride bilayer passivation of n-type crystalline silicon using response surface methodology. Applied Physics Letters, 101 (17). 171602pp. doi:10.1063/1.4764011
Rao, T. Sudersena, Webb, J. B., Houghton, D. C., Baribeau, J. M., Moore, W. T., Noad, J. P. (1988) Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering. Applied Physics Letters, 53 (1). 51-53 doi:10.1063/1.100123
Huang, M. L., Chang, Y. C., Chang, C. H., Lee, Y. J., Chang, P., Kwo, J., Wu, T. B., Hong, M. (2005) Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3. Applied Physics Letters, 87 (25). 252104pp. doi:10.1063/1.2146060
Saitoh, Hidetoshi, Hirose, Takeshi, Ohtsuka, Tomoo, Ichinose, Yukio (1994) Nucleation of boron nitride on cubic boron nitride microcrystallites using chemical vapor deposition. Applied Physics Letters, 64 (13). 1638-1640 doi:10.1063/1.111816
Owusu‐Sekyere, K., Chang, A. M., Chang, T. Y. (1988) Fabrication of gatable submicron channels in AlxGa1−xAs‐GaAs heterostructures. Applied Physics Letters, 52 (15). 1246-1248 doi:10.1063/1.99170
Kuiper, A. E. T., Willemsen, M. F. C., van IJzendoorn, L. J. (1988) Hydrogen incorporation in silicon (oxy)nitride thin films. Applied Physics Letters, 53 (22). 2149-2151 doi:10.1063/1.100301
Hundhausen, M., Ichiguchi, T., Shiraki, Y. (1988) Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Applied Physics Letters, 53 (2). 110-112 doi:10.1063/1.100384
Chowdhury, Zahidur R., Cho, Kevin, Kherani, Nazir P. (2012) High-quality surface passivation of silicon using native oxide and silicon nitride layers. Applied Physics Letters, 101 (2). 21601pp. doi:10.1063/1.4733336
Moslehi, Mehrdad M., Kermani, Ahmad, Saraswat, Krishna C. (1988) Linearly ramped temperature transient rapid thermal oxidation of silicon. Applied Physics Letters, 53 (12). 1104-1106 doi:10.1063/1.100656
 
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