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Hundhausen, M., Ichiguchi, T., Shiraki, Y. (1988) Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Applied Physics Letters, 53 (2). 110-112 doi:10.1063/1.100384

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Reference TypeJournal (article/letter/editorial)
TitleMagnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface
JournalApplied Physics Letters
AuthorsHundhausen, M.Author
Ichiguchi, T.Author
Shiraki, Y.Author
Year1988 (July 11)Volume53
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.100384Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484754Long-form Identifiermindat:1:5:8484754:8
GUID0
Full ReferenceHundhausen, M., Ichiguchi, T., Shiraki, Y. (1988) Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Applied Physics Letters, 53 (2). 110-112 doi:10.1063/1.100384
Plain TextHundhausen, M., Ichiguchi, T., Shiraki, Y. (1988) Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Applied Physics Letters, 53 (2). 110-112 doi:10.1063/1.100384
In(1988, July) Applied Physics Letters Vol. 53 (2) AIP Publishing

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Yang, C. H., Lyon, S. A., Tu, C. W. (1988) Photoluminescence from the two‐dimensional electron gas at GaAs/AlGaAs single heterojunctions. Applied Physics Letters, 53 (4). 285-287 doi:10.1063/1.99915
Ishihara, J., Ono, M., Ohno, Y., Ohno, H. (2013) A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires. Applied Physics Letters, 102 (21). 212402pp. doi:10.1063/1.4807171
Dobbelaere, W., Huang, D., Ünlü, M. S., Morkoç, H. (1988) AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates. Applied Physics Letters, 53 (2). 94-96 doi:10.1063/1.100359
Jiang, C., Tsui, D. C., Weimann, G. (1988) Threshold transport of high‐mobility two‐dimensional electron gas in GaAs/AlGaAs heterostructures. Applied Physics Letters, 53 (16). 1533-1535 doi:10.1063/1.99948
Wang, Chien-Chung, Liang, C.-T., Jiang, Yu-Ting, Chen, Y. F., Cooper, N. R., Simmons, M. Y., Ritchie, D. A. (2007) Huge positive magnetoresistance of GaAs∕AlGaAs high electron mobility transistor structures at high temperatures. Applied Physics Letters, 90 (25). 252106pp. doi:10.1063/1.2750388
Kadoya, Y., Noge, H., Someya, T., Sakaki, H. (1997) Effect of oxygen incorporation at AlGaAs/GaAs interfaces on the electrical properties of two-dimensional electron gas. Applied Physics Letters, 70 (5). 595-597 doi:10.1063/1.118330
Gold, A. (1989) Mobility of the two‐dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities. Applied Physics Letters, 54 (21). 2100-2102 doi:10.1063/1.101176
Liu, C. T., Lin, S. Y., Tsui, D. C., Lee, H., Ackley, D. (1988) Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures. Applied Physics Letters, 53 (25). 2510-2512 doi:10.1063/1.100409
Yamanaka, K., Fukunaga, T., Tsukada, N., Kobayashi, K. L. I., Ishii, M. (1986) Photocurrent spectroscopy in GaAs/AlGaAs multiple quantum wells under a high electric field perpendicular to the heterointerface. Applied Physics Letters, 48 (13). 840-842 doi:10.1063/1.96685
Mii, Y. J., Karunasiri, R. P. G., Wang, K. L. (1988) Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates. Applied Physics Letters, 53 (21). 2050-2052 doi:10.1063/1.100316
Raja, M. Y. A., Brueck, S. R. J., Osiński, M., Schaus, C. F., McInerney, J. G., Brennan, T. M., Hammons, B. E. (1988) Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium. Applied Physics Letters, 53 (18). 1678-1680 doi:10.1063/1.99795
 
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