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Rao, T. Sudersena, Webb, J. B., Houghton, D. C., Baribeau, J. M., Moore, W. T., Noad, J. P. (1988) Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering. Applied Physics Letters, 53 (1). 51-53 doi:10.1063/1.100123

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Reference TypeJournal (article/letter/editorial)
TitleHeteroepitaxy of InSb on silicon by metalorganic magnetron sputtering
JournalApplied Physics Letters
AuthorsRao, T. SudersenaAuthor
Webb, J. B.Author
Houghton, D. C.Author
Baribeau, J. M.Author
Moore, W. T.Author
Noad, J. P.Author
Year1988 (July 4)Volume53
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.100123Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8483969Long-form Identifiermindat:1:5:8483969:1
GUID0
Full ReferenceRao, T. Sudersena, Webb, J. B., Houghton, D. C., Baribeau, J. M., Moore, W. T., Noad, J. P. (1988) Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering. Applied Physics Letters, 53 (1). 51-53 doi:10.1063/1.100123
Plain TextRao, T. Sudersena, Webb, J. B., Houghton, D. C., Baribeau, J. M., Moore, W. T., Noad, J. P. (1988) Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering. Applied Physics Letters, 53 (1). 51-53 doi:10.1063/1.100123
In(1988, July) Applied Physics Letters Vol. 53 (1) AIP Publishing

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Rao, T. Sudersena, Halpin, C., Webb, J. B., Noad, J. P., McCaffrey, J. (1989) Effect of substrate temperature on the growth rate and surface morphology of heteroepitaxial indium antimonide layers grown on (100) GaAs by metalorganic magnetron sputtering. Journal of Applied Physics, 65 (2). 585-590 doi:10.1063/1.343112
Rao, T. Sudersena, Webb, James B., Noad, J. P., Jackman, J. (1989) The study of carbon incorporation during growth in epitaxial indium antimonide layers prepared by metalorganic magnetron sputtering. Canadian Journal of Physics, 67. 298-303 doi:10.1139/p89-052
Webb, J. B., Halpin, C., Noad, J. P. (1986) The structural and compositional characterization of InSb films prepared by metalorganic magnetron sputtering. Journal of Applied Physics, 60 (8). 2949-2953 doi:10.1063/1.337084
Feng, Z. C., Perkowitz, S., Rao, T. S., Webb, J. B. (1990) Resonance Raman scattering from epitaxial InSb films grown by metalorganic magnetron sputtering. Journal of Applied Physics, 68 (10). 5363-5365 doi:10.1063/1.347033
Webb, J. B., Halpin, C., Ehrismann, J., Noad, J. P. (1987) The preparation of epitaxial InSb films by magnetron sputtering. Canadian Journal of Physics, 65. 872-877 doi:10.1139/p87-135
Jackman, T. E., Houghton, D. C., Denhoff, M. W., Kechang, Song, McCaffrey, J., Jackman, J. A., Tuppen, C. G. (1988) Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3. Applied Physics Letters, 53 (10). 877-879 doi:10.1063/1.100101
Chen, J. C., Bush, P., Chen, W. K., Liu, Pao‐Lo (1988) Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 773-775 doi:10.1063/1.99829
Baribeau, J. M., Jackman, T. E., Houghton, D. C., Maigné, P., Denhoff, M. W. (1988) Growth and characterization of Si1−xGexand Ge epilayers on (100) Si. Journal of Applied Physics, 63 (12). 5738-5746 doi:10.1063/1.340312
Face, D. W., Neal, M. J., Matthiesen, M. M., Kucera, J. T., Crain, J., Graybeal, J. M., Orlando, T. P., Rudman, D. A. (1988) Preparation of superconducting thin films of bismuth strontium calcium copper oxides by reactive sputtering. Applied Physics Letters, 53 (3). 246-248 doi:10.1063/1.100589
Rousina, R., Halpin, C., Webb, J. B. (1990) Growth and characterization of In1−xGaxSb by metalorganic magnetron sputtering. Journal of Applied Physics, 68 (5). 2181-2186 doi:10.1063/1.346546
Webb, James B., Halpin, C. (1985) Deposition of indium antimonide films by metalorganic magnetron sputtering. Applied Physics Letters, 47 (8). 831-833 doi:10.1063/1.95999
 
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