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Chen, J. C., Bush, P., Chen, W. K., Liu, Pao‐Lo (1988) Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 773-775 doi:10.1063/1.99829

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Reference TypeJournal (article/letter/editorial)
TitleLow‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition
JournalApplied Physics Letters
AuthorsChen, J. C.Author
Bush, P.Author
Chen, W. K.Author
Liu, Pao‐LoAuthor
Year1988 (August 29)Volume53
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.99829Search in ResearchGate
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Mindat Ref. ID8485783Long-form Identifiermindat:1:5:8485783:7
GUID0
Full ReferenceChen, J. C., Bush, P., Chen, W. K., Liu, Pao‐Lo (1988) Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 773-775 doi:10.1063/1.99829
Plain TextChen, J. C., Bush, P., Chen, W. K., Liu, Pao‐Lo (1988) Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 773-775 doi:10.1063/1.99829
In(1988, August) Applied Physics Letters Vol. 53 (9) AIP Publishing

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Sugiura, O., Tanaka, Y., Shiina, K., Matsumura, M. (1987) Heteroepitaxial growth of CdTe on InSb by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (19). 1515-1517 doi:10.1063/1.98620
Chen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697
Wang, C. H., Cheng, K. Y., Yang, S. J., Hwang, F. C. (1985) The growth and characterization of CdTe epitaxial layers on CdTe and InSb by metalorganic chemical vapor deposition. Journal of Applied Physics, 58 (2). 757-762 doi:10.1063/1.336193
Horng, R. H., Wuu, D. S., Lee, M. K. (1988) Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low‐pressure organometallic chemical vapor deposition. Applied Physics Letters, 53 (26). 2614-2616 doi:10.1063/1.100175
Lee, M. K., Chang, J. H., Yeh, M. Y., Lin, Y. F. (1988) Heteroepitaxial growth of ZnSe on (111) Si by low‐pressure metalorganic chemical vapor deposition. Journal of Applied Physics, 64 (8). 4241-4243 doi:10.1063/1.341292
Lee, M. K., Wuu, D. S., Tung, H. H. (1987) Heteroepitaxial growth of InP directly on Si by low pressure metalorganic chemical vapor deposition. Applied Physics Letters, 50 (24). 1725-1726 doi:10.1063/1.97728
Karam, N. H., Liu, H., Yoshida, I., Bedair, S. M. (1988) Low‐temperature (250 °C) selective epitaxy of GaAs films andp‐njunction by laser‐assisted metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 767-769 doi:10.1063/1.99827
Oda, Shunri, Tanaka, Yuko, Sugiura, Osamu, Matsumura, Masakiyo (1989) Heteroepitaxial growth of HgTe on InSb at 200 °C by metalorganic chemical vapor deposition using ditertiarybutyltelluride. Journal of Applied Physics, 65 (4). 1808-1810 doi:10.1063/1.342913
Nouhi, Akbar, Stirn, Richard J. (1987) Heteroepitaxial growth of Cd1−xMnxTe on GaAs by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (26). 2251-2253 doi:10.1063/1.98927
Hoke, W. E., Lemonias, P. J., Traczewski, R. (1984) Metalorganic vapor deposition of CdTe and HgCdTe epitaxial films on InSb and GaAs substrates. Applied Physics Letters, 44 (11). 1046-1048 doi:10.1063/1.94637
Ebe, H., Nishijima, Y. (1995) (111)A CdTe rotation growth on (111) Si with low growth rate by metalorganic chemical vapor deposition. Applied Physics Letters, 67 (21). 3138-3140 doi:10.1063/1.114859
 
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