Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Chen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleMetalorganic chemical vapor deposition of indium phosphide by pulsing precursors
JournalApplied Physics Letters
AuthorsChen, W. K.Author
Chen, J. C.Author
Anthony, L.Author
Liu, P. L.Author
Year1989 (September 4)Volume55
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.101697Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487726Long-form Identifiermindat:1:5:8487726:6
GUID0
Full ReferenceChen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697
Plain TextChen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697
In(1989, September) Applied Physics Letters Vol. 55 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Chen, W. K., Chen, J. F., Chen, J. C., Kim, H. M., Anthony, L., Wie, C. R., Liu, P. L. (1989) Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow‐rate modulation epitaxy. Applied Physics Letters, 55 (8). 749-751 doi:10.1063/1.101795
Chen, J. C., Bush, P., Chen, W. K., Liu, Pao‐Lo (1988) Low‐temperature heteroepitaxial growth of InSb on CdTe by metalorganic chemical vapor deposition. Applied Physics Letters, 53 (9). 773-775 doi:10.1063/1.99829
Zhu, L. D., Chan, K. T., Wagner, D. K., Ballantyne, J. M. (1985) Photoluminescence study of the growth of indium phosphide by metalorganic chemical vapor deposition. Journal of Applied Physics, 57 (12). 5486-5492 doi:10.1063/1.335460
Ritchie, S., Spurdens, P. C., Hewett, N. P., Aylett, M. R. (1989) Interference filters using indium phosphide‐based epitaxial layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 55 (17). 1713-1714 doi:10.1063/1.102197
Spitzer, M. B., Keavney, C. J., Vernon, S. M., Haven, V. E. (1987) Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition. Applied Physics Letters, 51 (5). 364-366 doi:10.1063/1.98442
Tompa, G. S., Nelson, C. R., Saracino, M. A., Colter, P. C., Anderson, P. L., Wright, W. H., Schmit, J. L. (1989) Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high‐speed, rotating disk reactor. Applied Physics Letters, 55 (1). 62-64 doi:10.1063/1.101754
Yang, Jane J., Ruth, Ralph P., Manasevit, Harold M. (1981) Electrical properties of epitaxial indium phosphide films grown by metalorganic chemical vapor deposition. Journal of Applied Physics, 52 (11). 6729-6734 doi:10.1063/1.328624
Molassioti, A., Moser, M., Stapor, A., Scholz, F., Hostalek, M., Pohl, L. (1989) Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source. Applied Physics Letters, 54 (9). 857-858 doi:10.1063/1.100844
York, P. K., Beernink, K. J., Kim, J., Coleman, J. J., Fernández, G. E., Wayman, C. M. (1989) Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (24). 2476-2478 doi:10.1063/1.102003
Shu, C. K., Ou, J., Lin, H. C., Chen, W. K., Lee, M. C. (1998) Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor deposition. Applied Physics Letters, 73 (5). 641-643 doi:10.1063/1.121933
Huang, Z. C., Yang, Bing, Chen, H. K., Chen, J. C. (1995) Deep‐level‐free AlxGa1−xAs (x=0.22) layer grown by metalorganic chemical vapor deposition. Applied Physics Letters, 66 (20). 2745-2747 doi:10.1063/1.113695
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Š OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 02:38:41
Go to top of page