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Tompa, G. S., Nelson, C. R., Saracino, M. A., Colter, P. C., Anderson, P. L., Wright, W. H., Schmit, J. L. (1989) Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high‐speed, rotating disk reactor. Applied Physics Letters, 55 (1). 62-64 doi:10.1063/1.101754

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Reference TypeJournal (article/letter/editorial)
TitleMultiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high‐speed, rotating disk reactor
JournalApplied Physics Letters
AuthorsTompa, G. S.Author
Nelson, C. R.Author
Saracino, M. A.Author
Colter, P. C.Author
Anderson, P. L.Author
Wright, W. H.Author
Schmit, J. L.Author
Year1989 (July 3)Volume55
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.101754Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8487681Long-form Identifiermindat:1:5:8487681:4
GUID0
Full ReferenceTompa, G. S., Nelson, C. R., Saracino, M. A., Colter, P. C., Anderson, P. L., Wright, W. H., Schmit, J. L. (1989) Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high‐speed, rotating disk reactor. Applied Physics Letters, 55 (1). 62-64 doi:10.1063/1.101754
Plain TextTompa, G. S., Nelson, C. R., Saracino, M. A., Colter, P. C., Anderson, P. L., Wright, W. H., Schmit, J. L. (1989) Multiwafer growth of CdTe on GaAs by metalorganic chemical vapor deposition in a vertical, high‐speed, rotating disk reactor. Applied Physics Letters, 55 (1). 62-64 doi:10.1063/1.101754
In(1989, July) Applied Physics Letters Vol. 55 (1) AIP Publishing

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Noh, D. W., Gallois, B., Chern, C. S., Caracciolo, R., Kear, B. H., Zawadzki, P. A., Tompa, G. S., Norris, P. E. (1989) Metalorganic chemical vapor deposition of superconducting YBa2Cu3O7−xin a high‐speed rotating disk reactor. Journal of Applied Physics, 66 (10). 5099-5101 doi:10.1063/1.343739
Williams, L. M., Lu, P.‐Y., Chu, S. N. G., Wang, C.‐H. (1987) Multilayers of HgTe‐CdTe grown by low‐temperature metalorganic chemical vapor deposition. Journal of Applied Physics, 62 (1). 295-297 doi:10.1063/1.339144
Chen, W. K., Chen, J. C., Anthony, L., Liu, P. L. (1989) Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors. Applied Physics Letters, 55 (10). 987-989 doi:10.1063/1.101697
Hagar, B. G., Routh, E. L., Abdelhamid, M., Colter, P. C., Muth, J., Bedair, S. M. (2024) GaN-based tunnel junction with negative differential resistance by metalorganic chemical vapor deposition. Applied Physics Letters, 125 (8). doi:10.1063/5.0208759
Tompa, G.S., Salagaj, T., Cook, L., Stall, R.A., Nelson, C.R., Anderson, P.L., Wright, W.H., Ahlgren, W.L., Johnson, S.M. (1991) MOVPE growth of II–VI compounds in a vertical reactor with high-speed horizontal rotating disk. Journal of Crystal Growth, 107 (1). 198-202 doi:10.1016/0022-0248(91)90456-f
Staudenmann, J.‐L., Horning, R. D., Knox, R. D., Arch, D. K., Schmit, J. L. (1986) Anomalous temperature dependence of lattice parameters of metalorganic chemical vapor deposition CdTe grown on GaAs. Applied Physics Letters, 48 (15). 994-996 doi:10.1063/1.96635
York, P. K., Beernink, K. J., Kim, J., Coleman, J. J., Fernández, G. E., Wayman, C. M. (1989) Ethyldimethylindium for the growth of InGaAs‐GaAs strained‐layer lasers by metalorganic chemical vapor deposition. Applied Physics Letters, 55 (24). 2476-2478 doi:10.1063/1.102003
Roberts, J. C., Boutros, K. S., Bedair, S. M., Look, D. C. (1994) Low‐temperature growth of high resistivity GaAs by photoassisted metalorganic chemical vapor deposition. Applied Physics Letters, 64 (18). 2397-2399 doi:10.1063/1.111626
Wang, C. H., Cheng, K. Y., Yang, S. J. (1985) Photoluminescence in CdTe grown on GaAs by metalorganic chemical vapor deposition. Applied Physics Letters, 46 (10). 962-964 doi:10.1063/1.95923
Zhang, K., Boyd, E. P., Kwak, B. S., Wright, A. C., Erbil, A. (1989) Metalorganic chemical vapor deposition of Tl2CaBa2Cu2Oysuperconducting thin films on sapphire. Applied Physics Letters, 55 (12). 1258-1260 doi:10.1063/1.101892
Costrini, G., Coleman, J. J. (1985) Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor. Journal of Applied Physics, 57 (6). 2249-2252 doi:10.1063/1.334370
 
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