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Shepard, K., Smith, Z E., Aljishi, S., Wagner, S. (1988) Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon. Applied Physics Letters, 53 (17). 1644-1646 doi:10.1063/1.99937

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Reference TypeJournal (article/letter/editorial)
TitleKinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon
JournalApplied Physics Letters
AuthorsShepard, K.Author
Smith, Z E.Author
Aljishi, S.Author
Wagner, S.Author
Year1988 (October 24)Volume53
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.99937Search in ResearchGate
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Mindat Ref. ID8484568Long-form Identifiermindat:1:5:8484568:3
GUID0
Full ReferenceShepard, K., Smith, Z E., Aljishi, S., Wagner, S. (1988) Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon. Applied Physics Letters, 53 (17). 1644-1646 doi:10.1063/1.99937
Plain TextShepard, K., Smith, Z E., Aljishi, S., Wagner, S. (1988) Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon. Applied Physics Letters, 53 (17). 1644-1646 doi:10.1063/1.99937
In(1988, October) Applied Physics Letters Vol. 53 (17) AIP Publishing

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Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., Chu, T. L. (1987) Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films. Applied Physics Letters, 50 (21). 1521-1523 doi:10.1063/1.97819
Shen, D. S., Conde, J. P., Chu, V., Liu, J. Z., Aljishi, S., Smith, Z E., Maruyama, A., Wagner, S. (1988) Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection. Applied Physics Letters, 53 (16). 1542-1544 doi:10.1063/1.99950
Gleskova, H., Morin, P. A., Wagner, S. (1993) Kinetics of recovery of the light‐induced defects in hydrogenated amorphous silicon under illumination. Applied Physics Letters, 62 (17). 2063-2065 doi:10.1063/1.109480
Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449
Smith, Z E., Wagner, S. (1987) Band Tails, Entropy, and Equilibrium Defects in Hydrogenated Amorphous Silicon. Physical Review Letters, 59 (15). 1790 doi:10.1103/physrevlett.59.1790.3
Smith, Z E., Wagner, S. (1987) Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon. Physical Review Letters, 59 (6). 688-691 doi:10.1103/physrevlett.59.688
Smith, Z. E., Aljishi, S., Slobodin, D., Chu, V., Wagner, S., Lenahan, P. M., Arya, R. R., Bennett, M. S. (1986) Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous Silicon. Physical Review Letters, 57 (19). 2450-2453 doi:10.1103/physrevlett.57.2450
Aljishi, S., Jin, Shu, Ley, L., Wagner, S. (1990) Thermal equilibration of surface defects in hydrogenated amorphous silicon-germanium alloys. Physical Review Letters, 65 (5). 629-632 doi:10.1103/physrevlett.65.629
Yoon, Jong‐Hwan, Lee, Yoon‐Zik (1992) Annealing of recombination centers in the deposition and light induced high defect amorphous silicon. Applied Physics Letters, 61 (19). 2305-2307 doi:10.1063/1.108249
Smith, Z E., Wagner, S., Faughnan, B. W. (1985) Carrier lifetime model for the optical degradation of amorphous silicon solar cells. Applied Physics Letters, 46 (11). 1078-1080 doi:10.1063/1.95767
Tanguy, C., Hulin, D., Mourchid, A., Fauchet, P. M., Wagner, S. (1988) Free‐carrier and temperature effects in amorphous silicon thin films. Applied Physics Letters, 53 (10). 880-882 doi:10.1063/1.100102
 
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