Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449

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Reference Type	Journal (article/letter/editorial)
Title	Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap
Journal	Applied Physics Letters
Authors	Kolodzey, J.		Author
	Schwarz, R.		Author
	Aljishi, S.		Author
	Chu, V.		Author
	Shen, D.‐S.		Author
	Fauchet, P. M.		Author
	Wagner, S.		Author
Year	1988 (February 8)	Volume	52
Issue	6
Publisher	AIP Publishing
DOI	doi:10.1063/1.99449Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8483756	Long-form Identifier	mindat:1:5:8483756:9
GUID	0
Full Reference	Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449
Plain Text	Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449
In	(1988, February) Applied Physics Letters Vol. 52 (6) AIP Publishing

	Chu, V., Conde, J. P., Shen, D. S., Wagner, S. (1989) Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap. Applied Physics Letters, 55 (3). 262-264 doi:10.1063/1.101923
	*Conde, J. P., Chu, V., Shen, D. S., Wagner, S. (1994) Properties of amorphous silicon/amorphous silicon‐germanium multilayers. Journal of Applied Physics, 75 (3). 1638-1655 doi:10.1063/1.356377*
	Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., Chu, T. L. (1987) Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films. Applied Physics Letters, 50 (21). 1521-1523 doi:10.1063/1.97819
	Shen, D. S., Conde, J. P., Chu, V., Liu, J. Z., Aljishi, S., Smith, Z E., Maruyama, A., Wagner, S. (1988) Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection. Applied Physics Letters, 53 (16). 1542-1544 doi:10.1063/1.99950
	Kolodzey, J., Slobodin, D., Aljishi, S., Quinlan, S., Schwarz, R., Shen, D.S., Fauchet, P.M., Wagner, S. (1985) Transport properties of α-Si, Ge:H alloys prepared from SiF4, GeF4 and H2 in R.F. or D.C. Glow discharges. Journal of Non-Crystalline Solids, 77. 897-900 doi:10.1016/0022-3093(85)90805-1
	Tanguy, C., Hulin, D., Mourchid, A., Fauchet, P. M., Wagner, S. (1988) Free‐carrier and temperature effects in amorphous silicon thin films. Applied Physics Letters, 53 (10). 880-882 doi:10.1063/1.100102
	Schwarz, R., Kolodzey, J. S., Wagner, S., Kouzes, R. T. (1987) Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films. Applied Physics Letters, 50 (4). 188-190 doi:10.1063/1.97657
	Smith, Z. E., Aljishi, S., Slobodin, D., Chu, V., Wagner, S., Lenahan, P. M., Arya, R. R., Bennett, M. S. (1986) Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous Silicon. Physical Review Letters, 57 (19). 2450-2453 doi:10.1103/physrevlett.57.2450
	Al‐Dallal, S., Aljishi, S., Hammam, M., Al‐Alawi, S. M., Stutzmann, M., Jin, Shu, Muschik, T., Schwarz, R. (1991) High band‐gap hydrogenated amorphous silicon‐selenium alloys. Journal of Applied Physics, 70 (9). 4926-4930 doi:10.1063/1.349038
	Conde, J. P., Silva, M., Chu, V., Gleskova, H., Vasanth, K., Wagner, S., Shen, D. S., Popovicf, P., Grebner, S., Schwarz, R. (1996) In-plane photoconductivity in amorphous silicon doping multilayers. Philosophical Magazine B, 74 (4). 331-347 doi:10.1080/01418639608240338
	Shepard, K., Smith, Z E., Aljishi, S., Wagner, S. (1988) Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon. Applied Physics Letters, 53 (17). 1644-1646 doi:10.1063/1.99937

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Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449

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