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Chu, V., Conde, J. P., Shen, D. S., Wagner, S. (1989) Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap. Applied Physics Letters, 55 (3). 262-264 doi:10.1063/1.101923

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Reference TypeJournal (article/letter/editorial)
TitlePhotocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap
JournalApplied Physics Letters
AuthorsChu, V.Author
Conde, J. P.Author
Shen, D. S.Author
Wagner, S.Author
Year1989 (July 17)Volume55
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.101923Search in ResearchGate
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Mindat Ref. ID8489039Long-form Identifiermindat:1:5:8489039:1
GUID0
Full ReferenceChu, V., Conde, J. P., Shen, D. S., Wagner, S. (1989) Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap. Applied Physics Letters, 55 (3). 262-264 doi:10.1063/1.101923
Plain TextChu, V., Conde, J. P., Shen, D. S., Wagner, S. (1989) Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap. Applied Physics Letters, 55 (3). 262-264 doi:10.1063/1.101923
In(1989, July) Applied Physics Letters Vol. 55 (3) AIP Publishing

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Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449
Conde, J. P., Chu, V., Shen, D. S., Wagner, S. (1994) Properties of amorphous silicon/amorphous silicon‐germanium multilayers. Journal of Applied Physics, 75 (3). 1638-1655 doi:10.1063/1.356377
Shen, D. S., Conde, J. P., Chu, V., Wagner, S. (1994) Carrier lifetime in amorphous semiconductors. Journal of Applied Physics, 75 (11). 7349-7355 doi:10.1063/1.356647
Shen, D. S., Conde, J. P., Chu, V., Liu, J. Z., Aljishi, S., Smith, Z E., Maruyama, A., Wagner, S. (1988) Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection. Applied Physics Letters, 53 (16). 1542-1544 doi:10.1063/1.99950
Boucinha, M., Brogueira, P., Chu, V., Conde, J. P. (2000) Amorphous silicon air-gap resonators on large-area substrates. Applied Physics Letters, 77 (6). 907-909 doi:10.1063/1.1306912
Boucinha, M., Chu, V., Conde, J. P. (1998) Air-gap amorphous silicon thin film transistors. Applied Physics Letters, 73 (4). 502-504 doi:10.1063/1.121914
Banerjee, A., Xu, X., Yang, J., Guha, S. (1995) Carrier collection losses in amorphous silicon and amorphous silicon–germanium alloy solar cells. Applied Physics Letters, 67 (20). 2975-2977 doi:10.1063/1.114830
Shen, D. S., Wagner, S. (1996) Transient photocurrent in hydrogenated amorphous silicon and implications for photodetector devices. Journal of Applied Physics, 79 (2). 794pp. doi:10.1063/1.360827
Conde, J. P., Silva, M., Chu, V., Gleskova, H., Vasanth, K., Wagner, S., Shen, D. S., Popovicf, P., Grebner, S., Schwarz, R. (1996) In-plane photoconductivity in amorphous silicon doping multilayers. Philosophical Magazine B, 74 (4). 331-347 doi:10.1080/01418639608240338
Liu, Jeffrey Zhaohuai, Chu, V., Shen, D. S., Slobodin, D., Wagner, S. (1989) Thermal relaxation of the electric conductivity in amorphous silicon-germanium alloys. Physical Review B, 40 (9) 6424-6427 doi:10.1103/physrevb.40.6424
Gaspar, J., Chu, V., Conde, J. P. (2004) Amorphous silicon electrostatic microresonators with high quality factors. Applied Physics Letters, 84 (4). 622-624 doi:10.1063/1.1644319
 
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