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Shen, D. S., Conde, J. P., Chu, V., Liu, J. Z., Aljishi, S., Smith, Z E., Maruyama, A., Wagner, S. (1988) Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection. Applied Physics Letters, 53 (16). 1542-1544 doi:10.1063/1.99950

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection
JournalApplied Physics Letters
AuthorsShen, D. S.Author
Conde, J. P.Author
Chu, V.Author
Liu, J. Z.Author
Aljishi, S.Author
Smith, Z E.Author
Maruyama, A.Author
Wagner, S.Author
Year1988 (October 17)Volume53
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.99950Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8484482Long-form Identifiermindat:1:5:8484482:4
GUID0
Full ReferenceShen, D. S., Conde, J. P., Chu, V., Liu, J. Z., Aljishi, S., Smith, Z E., Maruyama, A., Wagner, S. (1988) Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection. Applied Physics Letters, 53 (16). 1542-1544 doi:10.1063/1.99950
Plain TextShen, D. S., Conde, J. P., Chu, V., Liu, J. Z., Aljishi, S., Smith, Z E., Maruyama, A., Wagner, S. (1988) Determination of theD 0/−level in amorphous Si,Ge:H(F) by time‐of‐flight charge collection. Applied Physics Letters, 53 (16). 1542-1544 doi:10.1063/1.99950
In(1988, October) Applied Physics Letters Vol. 53 (16) AIP Publishing

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Smith, Z E., Chu, V., Shepard, K., Aljishi, S., Slobodin, D., Kolodzey, J., Wagner, S., Chu, T. L. (1987) Photothermal and photoconductive determination of surface and bulk defect densities in amorphous silicon films. Applied Physics Letters, 50 (21). 1521-1523 doi:10.1063/1.97819
Maruyama, A., Liu, J. Z., Chu, V., Shen, D. S., Wagner, S. (1991) Growth‐induced surface state in hydrogenated and fluorinated amorphous silicon. Journal of Applied Physics, 69 (4). 2346-2355 doi:10.1063/1.348717
Shepard, K., Smith, Z E., Aljishi, S., Wagner, S. (1988) Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon. Applied Physics Letters, 53 (17). 1644-1646 doi:10.1063/1.99937
Kolodzey, J., Schwarz, R., Aljishi, S., Chu, V., Shen, D.‐S., Fauchet, P. M., Wagner, S. (1988) Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap. Applied Physics Letters, 52 (6). 477-479 doi:10.1063/1.99449
Shen, D. S., Conde, J. P., Chu, V., Wagner, S. (1994) Carrier lifetime in amorphous semiconductors. Journal of Applied Physics, 75 (11). 7349-7355 doi:10.1063/1.356647
Chu, V., Conde, J. P., Shen, D. S., Wagner, S. (1989) Photocurrent collection in a Schottky barrier on an amorphous silicon‐germanium alloy structure with 1.23 eV optical gap. Applied Physics Letters, 55 (3). 262-264 doi:10.1063/1.101923
Conde, J. P., Chu, V., Shen, D. S., Wagner, S. (1994) Properties of amorphous silicon/amorphous silicon‐germanium multilayers. Journal of Applied Physics, 75 (3). 1638-1655 doi:10.1063/1.356377
Smith, Z. E., Aljishi, S., Slobodin, D., Chu, V., Wagner, S., Lenahan, P. M., Arya, R. R., Bennett, M. S. (1986) Thermal-Equilibrium Defect Processes in Hydrogenated Amorphous Silicon. Physical Review Letters, 57 (19). 2450-2453 doi:10.1103/physrevlett.57.2450
Conde, J.P., Aljishi, S., Shen, D.S., Angell, M., Wagner, S. (1987) Carrier transport mechanisms in a-Si:H,F/a-Si,Ge:H,F superlattices. Journal of Non-Crystalline Solids, 97. 939-942 doi:10.1016/0022-3093(87)90226-2
Kalema, V.N., Aljishi, S., Dawson, R.M.A., Slobodin, D., Wagner, S. (1986) The dielectric constants of a-Si,Ge:H,F alloys. Materials Letters, 4. 320-322 doi:10.1016/0167-577x(86)90034-0
Roca i Cabarrocas, P., Morin, P., Chu, V., Conde, J. P., Liu, J. Z., Park, H. R., Wagner, S. (1991) Optoelectronic properties of hydrogenated amorphous silicon films deposited under negative substrate bias. Journal of Applied Physics, 69 (5). 2942-2950 doi:10.1063/1.348605
 
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