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Aina, Leye, Mattingly, M., Potter, Bob (1987) High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (21). 1735-1737 doi:10.1063/1.98559

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Reference TypeJournal (article/letter/editorial)
TitleHigh mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsAina, LeyeAuthor
Mattingly, M.Author
Potter, BobAuthor
Year1987 (November 23)Volume51
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.98559Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8481572Long-form Identifiermindat:1:5:8481572:5
GUID0
Full ReferenceAina, Leye, Mattingly, M., Potter, Bob (1987) High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (21). 1735-1737 doi:10.1063/1.98559
Plain TextAina, Leye, Mattingly, M., Potter, Bob (1987) High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (21). 1735-1737 doi:10.1063/1.98559
In(1987, November) Applied Physics Letters Vol. 51 (21) AIP Publishing

See Also

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Aina, Leye, Mattingly, Mike, Potter, Bob (1990) Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (5). 492-493 doi:10.1063/1.103630
Aina, Leye, Mattingly, Mike (1987) High‐quality InAlAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (20). 1637-1639 doi:10.1063/1.98580
Aina, L., Mattingly, M., Burgess, M., Potter, R., O’Connor, J. M. (1991) High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1485-1487 doi:10.1063/1.105295
Aina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
Aina, Leye, Mattingly, Mike, Pande, Krishna (1986) Galvanomagnetic effect in AlGaAs/GaAs heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 49 (14). 865-867 doi:10.1063/1.97633
Aina, O., Serio, M., Mattingly, M., O’Connor, J., Shastry, S. K., Hill, D. S., Salerno, J. P., Ferm, P. (1991) High‐speed InP/GaInAs heterojunction phototransistor on InP‐on‐Si grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (3). 268-270 doi:10.1063/1.105617
Aina, O., Mattingly, M., Bates, J. R., Coggins, A., O’Connor, J., Shastry, S. K., Salerno, J. P., Davis, A., Lorenzo, J. P., Jones, K. S. (1991) High‐purity InP grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters, 58 (14). 1554-1556 doi:10.1063/1.105245
Kuo, C. P., Fry, K. L., Stringfellow, G. B. (1985) GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 47 (8). 855-857 doi:10.1063/1.96008
Carey, K. W., Hull, R., Fouquet, J. E., Kellert, F. G., Trott, G. R. (1987) Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (12). 910-912 doi:10.1063/1.98798
Takikawa, M., Komeno, J., Ozeki, M. (1983) Two‐dimensional electron gas in a selectively doped InP/In0.53Ga0.47As heterostructure grown by chloride transport vapor phase epitaxy. Applied Physics Letters, 43 (3). 280-282 doi:10.1063/1.94326
Aina, O., Mattingly, M., Steinhauser, S., Mariella, R., Melas, Andreas (1988) Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy. Journal of Crystal Growth, 92 (1). 215-221 doi:10.1016/0022-0248(88)90452-6
 
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