Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Aina, L., Mattingly, M., Burgess, M., Potter, R., O’Connor, J. M. (1991) High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1485-1487 doi:10.1063/1.105295

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHigh mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsAina, L.Author
Mattingly, M.Author
Burgess, M.Author
Potter, R.Author
O’Connor, J. M.Author
Year1991 (September 16)Volume59
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.105295Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8495561Long-form Identifiermindat:1:5:8495561:6
GUID0
Full ReferenceAina, L., Mattingly, M., Burgess, M., Potter, R., O’Connor, J. M. (1991) High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1485-1487 doi:10.1063/1.105295
Plain TextAina, L., Mattingly, M., Burgess, M., Potter, R., O’Connor, J. M. (1991) High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (12). 1485-1487 doi:10.1063/1.105295
In(1991, September) Applied Physics Letters Vol. 59 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Aina, Leye, Mattingly, M., Potter, Bob (1987) High mobility, selectively doped InP/GaInAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (21). 1735-1737 doi:10.1063/1.98559
Aina, Leye, Mattingly, Mike, Potter, Bob (1990) Modulation‐doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy. Applied Physics Letters, 57 (5). 492-493 doi:10.1063/1.103630
Aina, O., Serio, M., Mattingly, M., O’Connor, J., Shastry, S. K., Hill, D. S., Salerno, J. P., Ferm, P. (1991) High‐speed InP/GaInAs heterojunction phototransistor on InP‐on‐Si grown by organometallic vapor phase epitaxy. Applied Physics Letters, 59 (3). 268-270 doi:10.1063/1.105617
Nakajima, Shigeru, Murata, Michio, Shiga, Nobuo, Hayashi, Hideki, Inoue, Masataka (1991) High electron mobility in modulation‐dopedn‐AlInAs/InP heterostructures grown by low pressure organometallic vapor phase epitaxy. Applied Physics Letters, 59 (13). 1606-1607 doi:10.1063/1.106244
Aina, O., Mattingly, M., Bates, J. R., Coggins, A., O’Connor, J., Shastry, S. K., Salerno, J. P., Davis, A., Lorenzo, J. P., Jones, K. S. (1991) High‐purity InP grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters, 58 (14). 1554-1556 doi:10.1063/1.105245
Aina, Leye, Mattingly, Mike, Stecker, Lisa (1988) Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (17). 1620-1622 doi:10.1063/1.99930
Aina, Leye, Mattingly, Mike (1987) High‐quality InAlAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 51 (20). 1637-1639 doi:10.1063/1.98580
Zhu, L. D., Chan, K. T., Ballantyne, J. M. (1985) Very high mobility InP grown by low pressure metalorganic vapor phase epitaxy using solid trimethylindium source. Applied Physics Letters, 47 (1). 47-48 doi:10.1063/1.96398
Gaskill, D. K., Stauf, G. T., Bottka, N. (1991) High‐mobility InSb grown by organometallic vapor phase epitaxy. Applied Physics Letters, 58 (17). 1905-1907 doi:10.1063/1.105069
Saxena, R. R., Fouquet, J. E., Sardi, V. M., Moon, R. L. (1988) High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine. Applied Physics Letters, 53 (4). 304-306 doi:10.1063/1.99903
Aina, O., Mattingly, M., Steinhauser, S., Mariella, R., Melas, Andreas (1988) Sims and photoluminescence evaluation of high purity InP grown by organometallic vapor phase epitaxy. Journal of Crystal Growth, 92 (1). 215-221 doi:10.1016/0022-0248(88)90452-6
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 16:03:24
Go to top of page