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Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi, Motohisa, Junich, Sakaki, Hiroyuki (1990) High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection. Applied Physics Letters, 57 (19). 1983-1985 doi:10.1063/1.103986

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection
JournalApplied Physics Letters
AuthorsIkarashi, NobuyukiAuthor
Sakai, AkiraAuthor
Baba, ToshioAuthor
Ishida, KoichiAuthor
Motohisa, JunichAuthor
Sakaki, HiroyukiAuthor
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103986Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492072Long-form Identifiermindat:1:5:8492072:6
GUID0
Full ReferenceIkarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi, Motohisa, Junich, Sakaki, Hiroyuki (1990) High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection. Applied Physics Letters, 57 (19). 1983-1985 doi:10.1063/1.103986
Plain TextIkarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi, Motohisa, Junich, Sakaki, Hiroyuki (1990) High‐resolution transmission electron microscopy of GaAs/AlAs heterointerfaces grown on the misoriented substrate in the 〈110〉 projection. Applied Physics Letters, 57 (19). 1983-1985 doi:10.1063/1.103986
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Ikarashi, Nobuyuki, Tanaka, Masaaki, Baba, Toshio, Sakaki, Hiroyuki, Ishida, Koichi (1993) High-Resolution Transmission Electron Microscopy of AlAs/GaAs Interfacial Structure in the <110> Projection. Japanese Journal of Applied Physics, 32. 2824-2831 doi:10.1143/jjap.32.2824
Ikarashi, Nobuyuki, Baba, Toshio, Ishida, Koichi (1993) High‐resolution transmission electron microscopy of vicinal AlAs/GaAs interfacial structure. Applied Physics Letters, 62 (14). 1632-1634 doi:10.1063/1.108609
Ikarashi, Nobuyuki, Sakai, Akira, Baba, Toshio, Ishida, Koichi (1989) High‐resolution electron microscopy of the GaAs/AlGaAs heterointerface with (200) and transmitted beams. Applied Physics Letters, 55 (24). 2509-2511 doi:10.1063/1.102013
Ikarashi, Nobuyuki, Tanaka, Masaaki, Sakaki, Hiroyuki, Ishida, Koichi (1992) High‐resolution electron microscopy of growth interruption effect on AlAs/GaAs interfacial structure during molecular beam epitaxy. Applied Physics Letters, 60 (11). 1360-1362 doi:10.1063/1.107291
Ikarashi, Nobuyuki, Tatsumi, Toru, Ishida, Koichi (1994) High-Resolution Transmission Electron Microscopy of Si/Ge Interfacial Structures. Japanese Journal of Applied Physics, 33. 1228-1233 doi:10.1143/jjap.33.1228
Ikarashi, Nobuyuki, Ishida, Koichi (1998) High-resolution Transmission Electron Microscopy of Semiconductor Hetero-epitaxial Interfacial Structures. Materia Japan, 37 (12). 1003 doi:10.2320/materia.37.1003
Ono, Haruhiko, Ikarashi, Nobuyuki, Baba, Toshio (1995) Al diffusion into GaAs from monatomic AlAs layers investigated by localized vibrational modes. Applied Physics Letters, 66 (5). 601-603 doi:10.1063/1.114026
Koh, Shinji, Nakanishi, Akira, Kawaguchi, Hitoshi (2010) Electron spin relaxation time in GaAs/AlGaAs multiple quantum wells grown on slightly misoriented GaAs(110) substrates. Applied Physics Letters, 97 (8). 81111pp. doi:10.1063/1.3483768
Sakai, Akira, Tatsumi, Toru, Ishida, Koichi (1989) Direct observation of a 7 × 7 superstructure at the amorphous Si/Si(111) interface by cross-sectional high resolution transmission electron microscopy. Surface Science Letters, 224 (1). doi:10.1016/0167-2584(89)90134-5
Furuta, Tomofumi, Sakaki, Hiroyuki, Ichinose, Hideki, Ishida, Yoichi, Sone, Mitsuo, Onoe, Morio (1984) Structural Evaluation of GaAs/AlGaAs Heterointerfaces by Atomic-Resolution Electron Micrograph with Clear Contrast. Japanese Journal of Applied Physics, 23. doi:10.1143/jjap.23.l265
Kim, Y. H., Lee, J. Y., Noh, Y. G., Kim, M. D., Oh, J. E. (2007) High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate. Applied Physics Letters, 90 (24). 241915pp. doi:10.1063/1.2747674
 
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