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Liu, Xiaoming, Lee, Henry P., Wang, Shyh (1990) Polarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates. Applied Physics Letters, 57 (19). 1955-1957 doi:10.1063/1.104018

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Reference TypeJournal (article/letter/editorial)
TitlePolarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates
JournalApplied Physics Letters
AuthorsLiu, XiaomingAuthor
Lee, Henry P.Author
Wang, ShyhAuthor
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.104018Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492099Long-form Identifiermindat:1:5:8492099:3
GUID0
Full ReferenceLiu, Xiaoming, Lee, Henry P., Wang, Shyh (1990) Polarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates. Applied Physics Letters, 57 (19). 1955-1957 doi:10.1063/1.104018
Plain TextLiu, Xiaoming, Lee, Henry P., Wang, Shyh (1990) Polarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates. Applied Physics Letters, 57 (19). 1955-1957 doi:10.1063/1.104018
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

See Also

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Lee, Henry P., Liu, Xiaoming, Wang, Shyh (1990) Double‐heterostructure GaAs/AlGaAs lasers on Si substrates with reduced threshold current and built‐in index guiding by selective‐area molecular beam epitaxy. Applied Physics Letters, 56 (11). 1014-1016 doi:10.1063/1.102602
Lee, Henry P., Liu, Xiaoming, Lin, Hong, Smith, John S., Wang, Shyh, Huang, Yi‐He, Yu, Peter, Huang, Yi‐Zhu (1988) Tensile stress variations of chemically etched GaAs films grown on Si substrates. Applied Physics Letters, 53 (24). 2394-2396 doi:10.1063/1.100241
Lee, Henry P., Liu, Xiaoming, Wang, Shyh, George, Thomas, Weber, Eicke R. (1989) Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy. Applied Physics Letters, 54 (26). 2695-2697 doi:10.1063/1.101018
Burns, Geoffrey F., Blanck, Hervé, Fonstad, Clifton G. (1990) Low‐threshold GaAs/AlGaAs graded‐index separate confinement heterostructure lasers grown by molecular beam epitaxy on oxide‐masked Si substrates. Applied Physics Letters, 56 (25). 2499-2501 doi:10.1063/1.102870
Dupuis, R. D., van der Ziel, J. P., Logan, R. A., Brown, J. M., Pinzone, C. J. (1987) Low‐threshold high‐efficiency AlGaAs‐GaAs double‐heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition. Applied Physics Letters, 50 (7). 407-409 doi:10.1063/1.98185
Tsang, Won‐Tien, Wang, Shyh (1976) GaAs‐Ga1‐xAlxAs double‐heterostructure injection lasers with distributed Bragg reflectors. Applied Physics Letters, 28 (10). 596-598 doi:10.1063/1.88577
Huang, Yihe, Yu, Peter Y., Lee, Henry, Wang, Shyh (1988) Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K. Applied Physics Letters, 52 (7). 579-581 doi:10.1063/1.99371
Lee, C. P., Margalit, S., Yariv, A. (1977) Double‐heterostructure GaAs‐GaAlAs injection lasers on semi‐insulating substrates using carrier crowding. Applied Physics Letters, 31 (4). 281-282 doi:10.1063/1.89662
Wu, Yao‐Hwa, Werner, Michael, Wang, Shyh (1984) Channeled‐substrate GaAs/AlGaAs multiple quantum well lasers grown by molecular beam epitaxy. Applied Physics Letters, 45 (6). 606-608 doi:10.1063/1.95326
Wang, Y. H., Tai, K., Hsieh, Y. F., Chu, S. N. G., Wynn, J. D., Cho, A. Y. (1990) Observation of reduced current thresholds in GaAs/AlGaAs vertical‐cavity surface‐emitting lasers grown on 4° off‐orientation (001) GaAs substrates. Applied Physics Letters, 57 (16). 1613-1615 doi:10.1063/1.104086
Chong, Tow C., Fonstad, Clifton G. (1987) Low‐threshold operation of AlGaAs/GaAs multiple quantum well lasers grown on Si substrates by molecular beam epitaxy. Applied Physics Letters, 51 (4). 221-223 doi:10.1063/1.98481
 
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