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Huang, Yihe, Yu, Peter Y., Lee, Henry, Wang, Shyh (1988) Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K. Applied Physics Letters, 52 (7). 579-581 doi:10.1063/1.99371

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Reference TypeJournal (article/letter/editorial)
TitleCharacterization of GaAs film grown on Si substrate by photoluminescence at 77 K
JournalApplied Physics Letters
AuthorsHuang, YiheAuthor
Yu, Peter Y.Author
Lee, HenryAuthor
Wang, ShyhAuthor
Year1988 (February 15)Volume52
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.99371Search in ResearchGate
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Mindat Ref. ID8483766Long-form Identifiermindat:1:5:8483766:6
GUID0
Full ReferenceHuang, Yihe, Yu, Peter Y., Lee, Henry, Wang, Shyh (1988) Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K. Applied Physics Letters, 52 (7). 579-581 doi:10.1063/1.99371
Plain TextHuang, Yihe, Yu, Peter Y., Lee, Henry, Wang, Shyh (1988) Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K. Applied Physics Letters, 52 (7). 579-581 doi:10.1063/1.99371
In(1988, February) Applied Physics Letters Vol. 52 (7) AIP Publishing

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Lee, Henry P., Wang, Shyh, Huang, Yi‐He, Yu, Peter (1988) Photoluminescence studies of selective‐area molecular beam epitaxy of GaAs film on Si substrate. Applied Physics Letters, 52 (3). 215-217 doi:10.1063/1.99523
Huang, Yihe, Yu, Peter Y., Charasse, Marie‐Noelle, Lo, Yuhua, Wang, Shyh (1987) Raman study of an epitaxial GaAs layer on a Si [100] substrate. Applied Physics Letters, 51 (3). 192-194 doi:10.1063/1.98919
Lee, Henry P., Liu, Xiaoming, Lin, Hong, Smith, John S., Wang, Shyh, Huang, Yi‐He, Yu, Peter, Huang, Yi‐Zhu (1988) Tensile stress variations of chemically etched GaAs films grown on Si substrates. Applied Physics Letters, 53 (24). 2394-2396 doi:10.1063/1.100241
Lee, M. K., Wuu, D. S., Tung, H. H., Yu, K. Y., Huang, K. C. (1988) Characterization of InP/GaAs epilayers grown on Si substrates by low‐pressure organometallic vapor phase epitaxy. Applied Physics Letters, 52 (11). 880-882 doi:10.1063/1.99260
Liu, Xiaoming, Lee, Henry P., Wang, Shyh (1990) Polarization characteristics of AlGaAs/GaAs double‐heterostructure lasers grown on Si substrates. Applied Physics Letters, 57 (19). 1955-1957 doi:10.1063/1.104018
Lee, Henry P., Liu, Xiaoming, Wang, Shyh, George, Thomas, Weber, Eicke R. (1989) Improvement in the crystalline quality of heteroepitaxial GaAs on Si films grown by modulated molecular beam epitaxy. Applied Physics Letters, 54 (26). 2695-2697 doi:10.1063/1.101018
Xu, Z., Yoon, S. F., Yeo, Y. C., Chia, C. K., Cheng, Y. B., Dalapati, G. K. (2012) Characterization of thin-film GaAs diodes grown on germanium-on-insulator on Si substrate. Journal of Applied Physics, 111 (4). 44504pp. doi:10.1063/1.3686182
Choi, H. K., Lee, J. W., Salerno, J. P., Connors, M. K., Tsaur, B‐Y., Fan, J. C. C. (1988) Low‐threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy. Applied Physics Letters, 52 (14). 1114-1115 doi:10.1063/1.99178
Chen, H. Z., Paslaski, J., Yariv, A., Morkoç, H. (1988) High‐frequency modulation of AlGaAs/GaAs lasers grown on Si substrate by molecular beam epitaxy. Applied Physics Letters, 52 (8). 605-606 doi:10.1063/1.99378
Lee, M. K., Yeh, M. Y., Chang, J. H., Yu, K. Y., Lin, Y. F. (1990) Characterization of the ZnSe heteroepilayer on a GaAs/Si substrate. Journal of Applied Physics, 67 (8). 3898-3900 doi:10.1063/1.344996
Nguyen, D. H., Park, J., Noh, Y. K., Kim, M. D., Lee, D., Oh, J. E. (2009) Strong photoluminescence at 1.53 μm from GaSb/AlGaSb multiple quantum wells grown on Si substrate. Applied Physics Letters, 95 (6). 61910pp. doi:10.1063/1.3205473
 
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