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Huang, Yihe, Yu, Peter Y., Charasse, Marie‐Noelle, Lo, Yuhua, Wang, Shyh (1987) Raman study of an epitaxial GaAs layer on a Si [100] substrate. Applied Physics Letters, 51 (3). 192-194 doi:10.1063/1.98919

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Reference TypeJournal (article/letter/editorial)
TitleRaman study of an epitaxial GaAs layer on a Si [100] substrate
JournalApplied Physics Letters
AuthorsHuang, YiheAuthor
Yu, Peter Y.Author
Charasse, Marie‐NoelleAuthor
Lo, YuhuaAuthor
Wang, ShyhAuthor
Year1987 (July 20)Volume51
Issue3
PublisherAIP Publishing
DOIdoi:10.1063/1.98919Search in ResearchGate
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Mindat Ref. ID8481983Long-form Identifiermindat:1:5:8481983:7
GUID0
Full ReferenceHuang, Yihe, Yu, Peter Y., Charasse, Marie‐Noelle, Lo, Yuhua, Wang, Shyh (1987) Raman study of an epitaxial GaAs layer on a Si [100] substrate. Applied Physics Letters, 51 (3). 192-194 doi:10.1063/1.98919
Plain TextHuang, Yihe, Yu, Peter Y., Charasse, Marie‐Noelle, Lo, Yuhua, Wang, Shyh (1987) Raman study of an epitaxial GaAs layer on a Si [100] substrate. Applied Physics Letters, 51 (3). 192-194 doi:10.1063/1.98919
In(1987, July) Applied Physics Letters Vol. 51 (3) AIP Publishing

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Huang, Yihe, Yu, Peter Y., Lee, Henry, Wang, Shyh (1988) Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K. Applied Physics Letters, 52 (7). 579-581 doi:10.1063/1.99371
Lee, Henry P., Wang, Shyh, Huang, Yi‐He, Yu, Peter (1988) Photoluminescence studies of selective‐area molecular beam epitaxy of GaAs film on Si substrate. Applied Physics Letters, 52 (3). 215-217 doi:10.1063/1.99523
Lee, Henry P., Liu, Xiaoming, Lin, Hong, Smith, John S., Wang, Shyh, Huang, Yi‐He, Yu, Peter, Huang, Yi‐Zhu (1988) Tensile stress variations of chemically etched GaAs films grown on Si substrates. Applied Physics Letters, 53 (24). 2394-2396 doi:10.1063/1.100241
Horning, R. D., Staudenmann, J.‐L. (1987) Static atomic displacements in a CdTe epitaxial layer on a GaAs substrate. Applied Physics Letters, 50 (21). 1482-1484 doi:10.1063/1.97807
Hull, R., Fischer‐Colbrie, A., Rosner, S. J., Koch, S. M., Harris, J. S. (1987) Effect of substrate surface structure on nucleation of GaAs on Si(100). Applied Physics Letters, 51 (21). 1723-1725 doi:10.1063/1.98556
Rhee, Hwa Sung, Jang, Tae Woong, Ahn, Byung Tae (1999) Epitaxial growth of a (100) CoSi2 layer from carbonic cobalt films deposited on (100) Si substrate using an organometallic source. Applied Physics Letters, 74 (7). 1003-1005 doi:10.1063/1.123436
Nagai, Haruo, Noguchi, Yoshio (1975) A new grading layer for liquid epitaxial growth of GaxIn1−xAs on GaAs substrate. Applied Physics Letters, 26 (3). 108-110 doi:10.1063/1.88082
Huang, F. Y., Wang, Kang L. (1996) Normal‐incidence epitaxial SiGeC photodetector near 1.3 μm wavelength grown on Si substrate. Applied Physics Letters, 69 (16). 2330-2332 doi:10.1063/1.117514
Gourley, P. L., Longerbone, M., Zhang, S. L., Morkoç, H. (1987) Photoluminescence microscopy of epitaxial GaAs on Si. Applied Physics Letters, 51 (8). 599-601 doi:10.1063/1.98359
Roughani, B., Kallergi, M., Aubel, J., Sundaram, S. (1989) Raman scattering by epitaxial GaAs on a Si substrate. Journal of Applied Physics, 66 (10). 4946-4949 doi:10.1063/1.343766
Kirillov, D., Chung, Y. (1987) Raman scattering study of alloyed Au‐Ge ohmic contacts to GaAs. Applied Physics Letters, 51 (11). 846-848 doi:10.1063/1.98832
 
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