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Nguyen, D. H., Park, J., Noh, Y. K., Kim, M. D., Lee, D., Oh, J. E. (2009) Strong photoluminescence at 1.53 μm from GaSb/AlGaSb multiple quantum wells grown on Si substrate. Applied Physics Letters, 95 (6). 61910pp. doi:10.1063/1.3205473

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Reference TypeJournal (article/letter/editorial)
TitleStrong photoluminescence at 1.53 μm from GaSb/AlGaSb multiple quantum wells grown on Si substrate
JournalApplied Physics Letters
AuthorsNguyen, D. H.Author
Park, J.Author
Noh, Y. K.Author
Kim, M. D.Author
Lee, D.Author
Oh, J. E.Author
Year2009 (August 10)Volume95
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3205473Search in ResearchGate
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Mindat Ref. ID8581063Long-form Identifiermindat:1:5:8581063:9
GUID0
Full ReferenceNguyen, D. H., Park, J., Noh, Y. K., Kim, M. D., Lee, D., Oh, J. E. (2009) Strong photoluminescence at 1.53 μm from GaSb/AlGaSb multiple quantum wells grown on Si substrate. Applied Physics Letters, 95 (6). 61910pp. doi:10.1063/1.3205473
Plain TextNguyen, D. H., Park, J., Noh, Y. K., Kim, M. D., Lee, D., Oh, J. E. (2009) Strong photoluminescence at 1.53 μm from GaSb/AlGaSb multiple quantum wells grown on Si substrate. Applied Physics Letters, 95 (6). 61910pp. doi:10.1063/1.3205473
In(2009, August) Applied Physics Letters Vol. 95 (6) AIP Publishing

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Park, J. H., Lee, T. K., Noh, Y. K., Kim, M. D., Oh, Eunsoon (2009) Temperature and excitation power dependence of photoluminescence from high quality GaSb grown on AlSb and GaSb buffer layers. Journal of Applied Physics, 105 (4). 43516pp. doi:10.1063/1.3082009
Kim, Y. H., Lee, J. Y., Noh, Y. G., Kim, M. D., Cho, S. M., Kwon, Y. J., Oh, J. E. (2006) Growth mode and structural characterization of GaSb on Si (001) substrate: A transmission electron microscopy study. Applied Physics Letters, 88 (24). 241907pp. doi:10.1063/1.2209714
Kim, Y. H., Lee, J. Y., Noh, Y. G., Kim, M. D., Oh, J. E. (2007) High-resolution transmission electron microscopy study on the growth modes of GaSb islands grown on a semi-insulating GaAs (001) substrate. Applied Physics Letters, 90 (24). 241915pp. doi:10.1063/1.2747674
Kim, Y. H., Ruh, H., Noh, Y. K., Kim, M. D., Oh, J. E. (2010) Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study. Journal of Applied Physics, 107 (6). 63501pp. doi:10.1063/1.3327004
Noh, Y. K., Hwang, Y. J., Kim, M. D., Kwon, Y. J., Oh, J. E., Kim, Y. H., Lee, J. Y. (2007) Strucrural Properties of GaSb Layers Grown on InAs, AlSb, and GaSb Buffer Layers on GaAs (001) Substrates. Journal of the Korean Physical Society, 50 (6). 1929pp. doi:10.3938/jkps.50.1929
Kim, C. S., Kim, J. H., Jeong, H., Jho, Y. D., Kwon, H. K., Lee, H. S., Park, J. S., Song, K., Kim, S. H., Kim, Y. J., Lee, D., Yee, K. J. (2012) Control of coherent acoustic phonon generation with external bias in InGaN/GaN multiple quantum wells. Applied Physics Letters, 100 (10). 101105pp. doi:10.1063/1.3692594
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Lee, D. H., Kim, D. W., Leem, Y. A., Oh, J. C., Park, G. H., Woo, J. C., Yoo, K. H. (1993) Photoluminescence and photoluminescence excitation studies on GaAs/Al0.25Ga0.75As asymmetric coupled double quantum well. Journal of Applied Physics, 74 (5). 3475-3478 doi:10.1063/1.354524
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