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Yamaoka, Tomonori, Oyoshi, Keiji, Tagami, Takashi, Arima, Yasunori, Yamashita, Ken, Tanaka, Shuhei (1990) Crystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation. Applied Physics Letters, 57 (19). 1970-1972 doi:10.1063/1.103983

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Reference TypeJournal (article/letter/editorial)
TitleCrystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation
JournalApplied Physics Letters
AuthorsYamaoka, TomonoriAuthor
Oyoshi, KeijiAuthor
Tagami, TakashiAuthor
Arima, YasunoriAuthor
Yamashita, KenAuthor
Tanaka, ShuheiAuthor
Year1990 (November 5)Volume57
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.103983Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8492066Long-form Identifiermindat:1:5:8492066:5
GUID0
Full ReferenceYamaoka, Tomonori, Oyoshi, Keiji, Tagami, Takashi, Arima, Yasunori, Yamashita, Ken, Tanaka, Shuhei (1990) Crystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation. Applied Physics Letters, 57 (19). 1970-1972 doi:10.1063/1.103983
Plain TextYamaoka, Tomonori, Oyoshi, Keiji, Tagami, Takashi, Arima, Yasunori, Yamashita, Ken, Tanaka, Shuhei (1990) Crystallization of amorphous Si on a glass substrate through nucleation by Si+ion implantation. Applied Physics Letters, 57 (19). 1970-1972 doi:10.1063/1.103983
In(1990, November) Applied Physics Letters Vol. 57 (19) AIP Publishing

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Oyoshi, Keiji, Yamaoka, Tomonori, Tagami, Takashi, Arima, Yasunori, Tanaka, Shuhei (1992) Grainā€size distribution in ionā€irradiated amorphous Si films on glass substrates. Journal of Applied Physics, 71 (2). 648-652 doi:10.1063/1.351349
Shuhei Tanaka, , Takashi Tagami, , Tomonori Yamaoka, , Keiji Oyoshi, , Yasunori Arima, (1993) Ion implantation for large-area optoelectronics on glass substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 74 (1). 317-321 doi:10.1016/0168-583x(93)95068-g
Oyoshi, Keiji, Tagami, Takashi, Tanaka, Shuhei (1993) Charging Effect of Ion Implantation on Glass. Japanese Journal of Applied Physics, 32. 5170-5175 doi:10.1143/jjap.32.5170
Oyoshi, Keiji, Tagami, Takashi, Tanaka, Shuhei (1991) Smoothing of Silica Glass Surfaces by Ion Implantation. Japanese Journal of Applied Physics, 30. 1854-1859 doi:10.1143/jjap.30.1854
Oyoshi, Keiji, Tagami, Takashi, Tanaka, Shubei (1990) Formation of buried oxynitride layers in silica glass by ion implantation. Journal of Applied Physics, 68 (7). 3653-3660 doi:10.1063/1.346329
Keiji, Oyoshi, Takashi, Tagami, Ken, Yamashita, Shuhei, Tanaka (1991) Formation of phosphosilicate glass layers in glasses by ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 59. 1324-1327 doi:10.1016/0168-583x(91)95822-u
Oyoshi, Keiji, Kusuda, Yukihisa, Yamaoka, Tomonori, Tanaka, Shuhei (1988) The Dependence of Field Effect Mobilities on Substrate Temperature for Amorphous Silicon Deposition for Amorphous Silicon Thin Film Transistors. Japanese Journal of Applied Physics, 27. doi:10.1143/jjap.27.l2010
Im, J. S., Atwater, Harry A. (1990) Ion irradiation enhanced crystal nucleation in amorphous Si thin films. Applied Physics Letters, 57 (17). 1766-1768 doi:10.1063/1.104061
Roth, J. A., Olson, G. L., Jacobson, D. C., Poate, J. M. (1990) Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation. Applied Physics Letters, 57 (13). 1340-1342 doi:10.1063/1.103477
Guendouz, M., Richard, J., Joubert, P., Haji, L. (1991) Lateral solid phase crystallization of amorphous Si induced by patterned indium tin oxide on a glass substrate. Applied Physics Letters, 59 (12). 1430-1432 doi:10.1063/1.105277
Hosono, Hideo, Abe, Yoshihiro, Oyoshi, Keiji, Tanaka, Shuhei (1991) Effects of coimplantation of silicon and nitrogen on structural defects and Si-N bond formation in silica glass. Physical Review B, 43 (14) 11966-11970 doi:10.1103/physrevb.43.11966
 
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