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Mooney, P. M., Theis, T. N., Wright, S. L. (1988) Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content. Applied Physics Letters, 53 (25). 2546-2548 doi:10.1063/1.100203

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Reference TypeJournal (article/letter/editorial)
TitleEffect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content
JournalApplied Physics Letters
AuthorsMooney, P. M.Author
Theis, T. N.Author
Wright, S. L.Author
Year1988 (December 19)Volume53
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.100203Search in ResearchGate
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Mindat Ref. ID8485178Long-form Identifiermindat:1:5:8485178:1
GUID0
Full ReferenceMooney, P. M., Theis, T. N., Wright, S. L. (1988) Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content. Applied Physics Letters, 53 (25). 2546-2548 doi:10.1063/1.100203
Plain TextMooney, P. M., Theis, T. N., Wright, S. L. (1988) Effect of local alloy disorder on emission kinetics of deep donors (DXcenters) in AlxGa1−xAs of low Al content. Applied Physics Letters, 53 (25). 2546-2548 doi:10.1063/1.100203
In(1988, December) Applied Physics Letters Vol. 53 (25) AIP Publishing

See Also

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Kirtley, J. R., Theis, T. N., Mooney, P. M., Wright, S. L. (1988) Noise spectroscopy of deep level (DX) centers in GaAs‐AlxGa1−xAs heterostructures. Journal of Applied Physics, 63 (5). 1541-1548 doi:10.1063/1.339938
Mooney, Patricia M., Theis, T.N., Wright, S.L. (1991) Alloy Effects on Emission Rates for Deep Donors (DX Centers) in AlXGa1-XAs with Very Low AlAs Mole Fraction. Materials Science Forum, 38. 1109-1114 doi:10.4028/www.scientific.net/msf.38-41.1109
Theis, T. N., Parker, B. D., Solomon, P. M., Wright, S. L. (1986) Hot‐electron capture toDXcenters in AlxGa1−xAs at low Al mole fractions (x<0.2). Applied Physics Letters, 49 (22). 1542-1544 doi:10.1063/1.97276
Theis, T. N., Wright, S. L. (1986) Origin of ‘‘residual’’ persistent photoconductivity in selectively doped GaAs/AlxGa1−xAs heterojunctions. Applied Physics Letters, 48 (20). 1374-1376 doi:10.1063/1.97028
Calleja, E., Garcia, F., Gomez, A., Muñoz, E., Mooney, P. M., Morgan, T. N., Wright, S. L. (1990) Effects of the local environment on the properties ofDXcenters in Si‐doped GaAs and dilute AlxGa1−xAs alloys. Applied Physics Letters, 56 (10). 934-936 doi:10.1063/1.102630
Calleja, E., Mooney, P. M., Theis, T. N., Wright, S. L. (1990) Exponential thermal emission transients fromDXcenters in heavily Si‐doped GaAs. Applied Physics Letters, 56 (21). 2102-2104 doi:10.1063/1.102986
Mooney, P. M., Caswell, N. S., Wright, S. L. (1987) The capture barrier of theDXcenter in Si‐doped AlxGa1−xAs. Journal of Applied Physics, 62 (12). 4786-4797 doi:10.1063/1.338981
As, D. J., Epperlein, P. W., Mooney, P. M. (1988) Deep electron traps in GaAs/n‐AlxGa1−xAs single‐quantum wells. Journal of Applied Physics, 64 (5). 2408-2414 doi:10.1063/1.341674
Mooney, P. M., Parker, B. D., Cardone, F., Gibart, P., Portal, J. C. (1992) DXcenters in Sn‐doped AlxGa1−xAs grown by metalorganic vapor phase epitaxy atT≥850 °C. Applied Physics Letters, 60 (3). 374-376 doi:10.1063/1.106661
Caswell, N. S., Mooney, P. M., Wright, S. L., Solomon, P. M. (1986) Effect of the silicon doping concentration on the recombination kinetics ofDXcenters in Al0.35Ga0.65As. Applied Physics Letters, 48 (16). 1093-1095 doi:10.1063/1.96608
Nathan, M. I., Tiwari, S., Mooney, P. M., Wright, S. L. (1987) DXcenters in AlGaAsp‐nheterojunctions and heterojunction bipolar transistors. Journal of Applied Physics, 62 (8). 3234-3236 doi:10.1063/1.339326
 
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