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Son, N. T., Hai, P. N., Janzén, E. (2001) Carbon vacancy-related defect in 4Hand 6HSiC. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201201

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Reference TypeJournal (article/letter/editorial)
TitleCarbon vacancy-related defect in 4Hand 6HSiC
JournalPhysical Review B
AuthorsSon, N. T.Author
Hai, P. N.Author
Janzén, E.Author
Year2001 (April 20)Volume63
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.201201Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14156659Long-form Identifiermindat:1:5:14156659:9
GUID0
Full ReferenceSon, N. T., Hai, P. N., Janzén, E. (2001) Carbon vacancy-related defect in 4Hand 6HSiC. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201201
Plain TextSon, N. T., Hai, P. N., Janzén, E. (2001) Carbon vacancy-related defect in 4Hand 6HSiC. Physical Review B, 63 (20) doi:10.1103/physrevb.63.201201
In(2001, May) Physical Review B Vol. 63 (20) American Physical Society (APS)

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Son, N. T., Zolnai, Z., Janzén, E. (2003) Silicon vacancy relatedTV2acenter in 4H-SiC. Physical Review B, 68 (20) doi:10.1103/physrevb.68.205211
Sörman, E., Son, N. T., Chen, W. M., Kordina, O., Hallin, C., Janzén, E. (2000) Silicon vacancy related defect in 4H and 6H SiC. Physical Review B, 61 (4) 2613-2620 doi:10.1103/physrevb.61.2613
Son, N. T., Hai, P. N., Janzén, E. (2001) Silicon Antisite in4HSiC. Physical Review Letters, 87 (4). doi:10.1103/physrevlett.87.045502
Umeda, T., Isoya, J., Morishita, N., Ohshima, T., Kamiya, T., Gali, A., Deák, P., Son, N., Janzén, E. (2004) EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC. Physical Review B, 70 (23) doi:10.1103/physrevb.70.235212
Son, N. T., Hemmingsson, C. G., Paskova, T., Evans, K. R., Usui, A., Morishita, N., Ohshima, T., Isoya, J., Monemar, B., Janzén, E. (2009) Identification of the gallium vacancy–oxygen pair defect in GaN. Physical Review B, 80 (15) doi:10.1103/physrevb.80.153202
Son, N. T., Hai, P. N., Chen, W. M., Hallin, C., Monemar, B., Janzén, E. (2000) Hole effective masses in4H SiC. Physical Review B, 61 (16) doi:10.1103/physrevb.61.r10544
Aradi, B., Gali, A., Deák, P., Lowther, J. E., Son, N. T., Janzén, E., Choyke, W. J. (2001) Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC. Physical Review B, 63 (24) doi:10.1103/physrevb.63.245202
Umeda, T., Ishitsuka, Y., Isoya, J., Son, N. T., Janzén, E., Morishita, N., Ohshima, T., Itoh, H., Gali, A. (2005) EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC. Physical Review B, 71 (19) doi:10.1103/physrevb.71.193202
Aavikko, R., Saarinen, K., Tuomisto, F., Magnusson, B., Son, N. T., Janzén, E. (2007) Clustering of vacancy defects in high-purity semi-insulating SiC. Physical Review B, 75 (8) doi:10.1103/physrevb.75.085208
Gali, A., Hornos, T., Son, N. T., Janzén, E., Choyke, W. J. (2007) Ab initiosupercell calculations on aluminum-related defects in SiC. Physical Review B, 75 (4) doi:10.1103/physrevb.75.045211
Son, N. T., Janzén, E., Isoya, J., Morishita, N., Hanaya, H., Takizawa, H., Ohshima, T., Gali, A. (2009) Identification of a Frenkel-pair defect in electron-irradiated 3CSiC. Physical Review B, 80 (12) doi:10.1103/physrevb.80.125201
 
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