Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Zawadzki, Mary T., Luo, Weiwei, Clancy, Paulette (2001) Tight-binding molecular dynamics study of vacancy-interstitial annihilation in silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205205

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleTight-binding molecular dynamics study of vacancy-interstitial annihilation in silicon
JournalPhysical Review B
AuthorsZawadzki, Mary T.Author
Luo, WeiweiAuthor
Clancy, PauletteAuthor
Year2001 (April 20)Volume63
Issue20
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrevb.63.205205Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID14156701Long-form Identifiermindat:1:5:14156701:5
GUID0
Full ReferenceZawadzki, Mary T., Luo, Weiwei, Clancy, Paulette (2001) Tight-binding molecular dynamics study of vacancy-interstitial annihilation in silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205205
Plain TextZawadzki, Mary T., Luo, Weiwei, Clancy, Paulette (2001) Tight-binding molecular dynamics study of vacancy-interstitial annihilation in silicon. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205205
In(2001, May) Physical Review B Vol. 63 (20) American Physical Society (APS)

See Also

These are possibly similar items as determined by title/reference text matching only.

Roberts, Bruce W., Luo, Weiwei, Johnson, Kurt A., Clancy, Paulette (1999) An order(N) tight-binding molecular dynamics study of intrinsic defect diffusion in silicon. Chemical Engineering Journal, 74. 67-75 doi:10.1016/s1385-8947(99)00062-5
Luo, Weiwei, Clancy, Paulette (2001) Identification of stable boron clusters in c-Si using tight-binding statics. Journal of Applied Physics, 89 (3). 1596pp. doi:10.1063/1.1335644
Panda, B. K., Mukherjee, S., Behera, S. N. (2001) Orthogonal tight-binding molecular-dynamics simulations of silicon clusters. Physical Review B, 63 (4) doi:10.1103/physrevb.63.045404
Tang, Meijie, Colombo, L., Zhu, Jing, Diaz de la Rubia, T. (1997) Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes. Physical Review B, 55 (21) 14279-14289 doi:10.1103/physrevb.55.14279
Kolesnikov, A. V., Lipperheide, R., Wille, U. (2001) Tight-binding study of interface states in semiconductor heterojunctions. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205322
Cogoni, M., Uberuaga, B. P., Voter, A. F., Colombo, L. (2005) Diffusion of small self-interstitial clusters in silicon: Temperature-accelerated tight-binding molecular dynamics simulations. Physical Review B, 71 (12) doi:10.1103/physrevb.71.121203
Pick, Štěpán, Dreyssé, Hugues (2001) Oxygen-driven magnetization reorientation in Fe(001) bilayer: A tight-binding study. Physical Review B, 63 (20) doi:10.1103/physrevb.63.205427
Menon, Madhu, Subbaswamy, K. R. (1993) Nonorthogonal tight-binding molecular-dynamics study of silicon clusters. Physical Review B, 47 (19) 12754-12759 doi:10.1103/physrevb.47.12754
Jääskeläinen,1, Anna, Colombo,2, Luciano, Nieminen1, Risto (2001) Silicon self-diffusion constants by tight-binding molecular dynamics. Physical Review B, 64 (23) doi:10.1103/physrevb.64.233203
Wang, C. Z., Chan, C. T., Ho, K. M. (1990) Tight-binding molecular-dynamics study of phonon anharmonic effects in silicon and diamond. Physical Review B, 42 (17) 11276-11283 doi:10.1103/physrevb.42.11276
Fu, Chu-Chun, Weissmann, Mariana (1999) Tight-binding molecular-dynamics study of amorphous carbon deposits over silicon surfaces. Physical Review B, 60 (4) 2762-2770 doi:10.1103/physrevb.60.2762
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 30, 2025 08:54:10
Go to top of page